MachineU > China Products > Electrical Equipment & Supplies
AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition
AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition
Specifications
Brand Name :
Hua Xuan Yang
Model Number :
AP1334GEU-HF
Certification :
RoHS、SGS
Place of Origin :
China
MOQ :
Negotiable
Price :
Negotiate
Payment Terms :
T/T, Western Union, L/C
Supply Ability :
10,000/Month
Delivery Time :
4~5 week
Packaging Details :
Carton Box
Part number :
AP1334GEU-HF
Lead Time :
In Stock
Rosh :
Yes
Condition :
New
Sample: :
Support
Type: :
Same Datasheets
Description

Electronic component AP1334GEU-HF advantage price for original stock

Description

AP1334 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.

Absolute Maximum Ratings@Tj=25oC.(unless otherwise specified)

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage +8 V
ID@TA=25℃ Drain Current3, VGS @ 4.5V 2.1 A
ID@TA=70℃ Drain Current3, VGS @ 4.5V 1.7 A
IDM Pulsed Drain Current1 8 A
PD@TA=25℃ Total Power Dissipation 0.35 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data

Symbol Parameter Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3 360 ℃/W

AP1334GEU-H

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=2A - - 65 mΩ
VGS=2.5V, ID=1.5A - - 75 mΩ
VGS=1.8V, ID=1A - - 85 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.3 - 1 V
gfs Forward Transconductance VDS=5V, ID=2A - 12 - S
IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +30 uA
Qg Total Gate Charge

ID=2A

VDS=10V VGS=4.5V

 - 9 14.4 nC
Qgs Gate-Source Charge - 1 - nC
Qgd Gate-Drain ("Miller") Charge - 2.5 - nC
td(on) Turn-on Delay Time

VDS=10V ID=1A RG=3.3Ω

VGS=5V

 - 6 - ns
tr Rise Time - 7 - ns
td(off) Turn-off Delay Time - 18 - ns
tf Fall Time - 3 - ns
Ciss Input Capacitance

VG.S=0V VDS=10V

f=1.0MHz

 - 570 912 pF
Coss Output Capacitance - 70 - pF
Crss Reverse Transfer Capacitance - 60 - pF
Rg Gate Resistance f=1.0MHz - 2.4 4.8 Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2 IS=1.2A, VGS=0V - - 1.2 V
trr Reverse Recovery Time

IS=2A, VGS=0V,

dI/dt=100A/µs

 - 14 - ns
Qrr Reverse Recovery Charge - 7 - nC

Notes:

1.Pulse width limited by Max. junction temperature.
2.Pulse test

3.Surface mounted on FR4 board, t ≦ 10 sec.

Our advantages:

We have professional team to serve you , professional ERP order system , WSM storage system , Support online purchasing ,Support BOM quotation ,

more all items are with good price and high quality .

Product tags

mosfet 200a

,

p55nfo power mosfet

,

irf520 mosfet
Send your message to this supplier
Send Now

AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition

Ask Latest Price
Product Detail
Brand Name :
Hua Xuan Yang
Model Number :
AP1334GEU-HF
Certification :
RoHS、SGS
Place of Origin :
China
MOQ :
Negotiable
Price :
Negotiate
Contact Supplier
AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Mosfet Power Transistor
MachineU China Products Electrical Equipment & Supplies
Contact Supplier
Submit Requirement