( Electronic Components ) New AP2602GY-HF integrated circuits
Description
AP2602 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SOT-26 package is widely used for all commercial-industrial applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol | Parameter | Rating | Units |
VDS | Drain-Source Voltage | 20 | V |
VGS | Gate-Source Voltage | +12 | V |
ID@TA=25℃ | Drain Current3, VGS @ 4.5V | 6.3 | A |
ID@TA=70℃ | Drain Current3, VGS @ 4.5V | 5 | A |
IDM | Pulsed Drain Current1 | 30 | A |
PD@TA=25℃ | Total Power Dissipation | 2 | W |
Linear Derating Factor | 0.016 | W/℃ | |
TSTG | Storage Temperature Range | -55 to 150 | ℃ |
TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
Thermal Data
Symbol | Parameter | Value | Unit |
Rthj-a | Maximum Thermal Resistance, Junction-ambient3 | 62.5 | ℃/W |
AP2602GY-H
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 20 | - | - | V |
ΔBVDSS/ΔTj | Breakdown Voltage Temperature Coefficient | Reference to 25℃, ID=1mA | - | 0.1 | - | V/℃ |
RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V, ID=5.5A | - | - | 30 | mΩ |
VGS=4.5V, ID=5.3A | - | - | 34 | mΩ | ||
VGS=2.5V, ID=2.6A | - | - | 50 | mΩ | ||
VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250uA | 0.5 | 0.85 | 1.2 | V |
gfs | Forward Transconductance | VDS=5V, ID=5.3A | - | 13 | - | S |
IDSS | Drain-Source Leakage Current | VDS=20V, VGS=0V | - | - | 1 | uA |
Drain-Source Leakage Current (Tj=55oC) | VDS=16V ,VGS=0V | - | - | 10 | uA | |
IGSS | Gate-Source Leakage | VGS=+12V, VDS=0V | - | - | +100 | nA |
Qg | Total Gate Charge2 |
ID=5.3A VDS=10V VGS=4.5V |
- | 8.7 | 16 | nC |
Qgs | Gate-Source Charge | - | 1.5 | - | nC | |
Qgd | Gate-Drain ("Miller") Charge | - | 3.6 | - | nC | |
td(on) | Turn-on Delay Time2 | VDS=15V | - | 6 | - | ns |
tr | Rise Time | ID=1A | - | 14 | - | ns |
td(off) | Turn-off Delay Time | RG=2Ω | - | 18.4 | - | ns |
tf | Fall Time | VGS=10V | - | 2.8 | - | ns |
Ciss | Input Capacitance |
VGS=0V VDS=15V f=1.0MHz |
- | 603 | 1085 | pF |
Coss | Output Capacitance | - | 144 | - | pF | |
Crss | Reverse Transfer Capacitance | - | 111 | - |
pF
|
Source-Drain Diode
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
VSD | Forward On Voltage2 | IS=1.2A, VGS=0V | - | - | 1.2 | V |
trr | Reverse Recovery Time2 |
IS=5A, VGS=0V, dI/dt=100A/µs |
- | 16.8 | - | ns |
Qrr | Reverse Recovery Charge | - | 11 | - | nC |
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 156℃/W when mounted on min. copper pad.
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