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3.13W 40A IGBT Diode Switching Transistor AP4434AGYT-HF PMPAK
3.13W 40A IGBT Diode Switching Transistor AP4434AGYT-HF PMPAK
Specifications
Brand Name :
Hua Xuan Yang
Model Number :
AP4434AGYT-HF
Certification :
RoHS、SGS
Place of Origin :
Shenzhen, China
MOQ :
Negotiation
Price :
Negotiate
Payment Terms :
Western Union, L/C, T/T
Supply Ability :
10,000PCS/MONTH
Delivery Time :
1 - 2 Weeks
Packaging Details :
Boxed
Model Number: :
AP4434AGYT-HF
Type: :
LOGIC ICS
Brand Name: :
Original brand
Package: :
DIP/SMD
Condition: :
New 100% AP4434AGYT-HF
Media Available: :
Datasheet
Description

AP4434AGYT-HF PMPAK(YT Original MOSFET/IGBT/Diode Switching/Transistor IC Chips

Description

AP4434A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.

The PMPAK® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage +8 V
ID@TA=25℃ Continuous Drain Current3, VGS @ 4.5V 10.8 A
ID@TA=70℃ Continuous Drain Current3, VGS @ 4.5V 8.6 A
IDM Pulsed Drain Current1 40 A
PD@TA=25℃ Total Power Dissipation3 3.13 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

hermal Data

Symbol Parameter Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient3 40 ℃/W

AP4434AGYT-H

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=7A - - 18 mΩ
VGS=2.5V, ID=4A - - 25 mΩ
VGS=1.8V, ID=1A - - 34 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.25 - 1 V
gfs Forward Transconductance VDS=10V, ID=7A - 29 - S
IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +100 nA
Qg Total Gate Charge

ID=7A VDS=10V

VGS=4.5V

 - 12.5 20 nC
Qgs Gate-Source Charge - 1.5 - nC
Qgd Gate-Drain ("Miller") Charge - 4.5 - nC
td(on) Turn-on Delay Time

VDS=10V ID=1A RG=3.3Ω

VGS=5V

 - 10 - ns
tr Rise Time - 10 - ns
td(off) Turn-off Delay Time - 24 - ns
tf Fall Time - 8 - ns
Ciss Input Capacitance

VG.S=0V VDS=10V

f=1.0MHz

 - 800 1280 pF
Coss Output Capacitance - 165 - pF
Crss Reverse Transfer Capacitance - 145 - pF
Rg Gate Resistance f=1.0MHz - 1.5 3 Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2 IS=2.6A, VGS=0V - - 1.2 V
trr Reverse Recovery Time

IS=7A, VGS=0V,

dI/dt=100A/µs

 - 20 - ns
Qrr Reverse Recovery Charge - 10 - nC

Notes:

1.Pulse width limited by Max. junction temperature.
2.Pulse test

3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t <10sec; 210oC/W when mounted on min. copper pad.

Product tags

in5408 diode equivalent

,

1n4148 switching diode

,

1n5400 series of diode
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3.13W 40A IGBT Diode Switching Transistor AP4434AGYT-HF PMPAK

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Product Detail
Brand Name :
Hua Xuan Yang
Model Number :
AP4434AGYT-HF
Certification :
RoHS、SGS
Place of Origin :
Shenzhen, China
MOQ :
Negotiation
Price :
Negotiate
Contact Supplier
3.13W 40A IGBT Diode Switching Transistor AP4434AGYT-HF PMPAK

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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