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G2012 20V 12A 10mr 2.4W Transistor Mosfet Module AP6982GN2-HF
G2012 20V 12A 10mr 2.4W Transistor Mosfet Module AP6982GN2-HF
Specifications
Brand Name :
Hua Xuan Yang
Model Number :
AP6982GN2-HF
Certification :
RoHS、SGS
Place of Origin :
Shenzhen, China
MOQ :
Negotiation
Price :
Negotiation
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Delivery Time :
1 - 2 Weeks
Packaging Details :
Boxed
Type :
Field-Effect Transistor
Product name :
AP6982GN2-HF
Quality :
Original
Application :
home appliances
Logo :
Customized
Vth: :
0.7V
Description

G2012 20V 12A 10mr transistor mosfet alternative for AP6982GN2-HF

Description:

AP6982 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.


Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage +8 V
ID@TA=25℃ Continuous Drain Current3 @ VGS=4.5V 11 A
ID@TA=70℃ Continuous Drain Current3 @ VGS=4.5V 8.7 A
IDM Pulsed Drain Current1 40 A
PD@TA=25℃ Total Power Dissipation3 2.4 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3 52 ℃/W

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=10A - 9.3 12.5 mΩ
VGS=2.5V, ID=5A - 11.3 16 mΩ
VGS=1.8V, ID=2A - 15 21 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.3 0.5 1 V
gfs Forward Transconductance VDS=5V, ID=10A - 34 - S
IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +100 nA
Qg Total Gate Charge

ID=10A

VDS=10V VGS=4.5V

 - 22 35.2 nC
Qgs Gate-Source Charge - 2.5 - nC
Qgd Gate-Drain ("Miller") Charge - 7 - nC
td(on) Turn-on Delay Time VDS=10V - 9 - ns
tr Rise Time ID=1A - 13 - ns
td(off) Turn-off Delay Time RG=3.3Ω - 40 - ns
tf Fall Time VGS=5V - 10 - ns
Ciss Input Capacitance

VGS=0V

VDS=10V f=1.0MHz

 - 1500 2400 pF
Coss Output Capacitance - 170 - pF
Crss Reverse Transfer Capacitance - 155 - pF
Rg Gate Resistance f=1.0MHz - 2 4 Ω


Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2 IS=2A, VGS=0V - - 1.2 V
trr Reverse Recovery Time

IS=10A, VGS=0V,

dI/dt=100A/µs

 - 11 - ns
Qrr Reverse Recovery Charge - 5 - nC

Notes:

1. Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t < 10s ; 165oC/W when mounted on min. copper pad.

This product is sensitive to electrostatic discharge, please handle with care.

This product is not authorized to be used as a critical component of a life support system or other similar systems.

APEC shall not be liable for any liability arising from the application or use of any product or circuit described in this agreement, nor shall it assign any license under its patent rights or assign the rights of others.

APEC reserves the right to make changes to any product in this Agreement without notice to improve reliability, function or design.

Product tags

mosfet module tp6c07001

,

mosfet stw20nm50fd

,

by255 diode
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G2012 20V 12A 10mr 2.4W Transistor Mosfet Module AP6982GN2-HF

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Product Detail
Brand Name :
Hua Xuan Yang
Model Number :
AP6982GN2-HF
Certification :
RoHS、SGS
Place of Origin :
Shenzhen, China
MOQ :
Negotiation
Price :
Negotiation
Contact Supplier
G2012 20V 12A 10mr 2.4W Transistor Mosfet Module AP6982GN2-HF

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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