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HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise
HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
HXY4466
Product name :
Mosfet Power Transistor
VDS :
30V
RDS(ON) < 35mΩ :
(VGS = 4.5V)
RDS(ON) < 23mΩ :
(VGS = 10V)
Type :
mosfet transistor
Description
60V N-Channel AlphaSGT HXY4264

Product Summary

VDS 30V
I = 10A VGS = 10V)
RDS(ON) < 23mΩ (VGS = 10V)
RDS(ON) < 35mΩ (VGS = 4.5V)


General Description

The HXY4466 uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. The source leads are separated to allow

a Kelvin connection to the source, which may be

used to bypass the source inductance.

HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

Electrical Characteristics (T =25°C unless otherwise noted)

HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT =25°C.

D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low NoiseHXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low NoiseHXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low NoiseHXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low NoiseHXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low NoiseHXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low NoiseHXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

Product tags

lna low noise amplifier

,

genset 25 kva silent

,

low noise preamplifier
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HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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