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HXY4404 Mos Field Effect Transistor Low Gate Charge For Switching Application
HXY4404 Mos Field Effect Transistor Low Gate Charge For Switching Application
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
HXY4404
Product name :
Mosfet Power Transistor
RDS(ON) (at VGS=10V) :
< 24mΩ
Material :
Silicon
RDS(ON) (at VGS = 2.5V) :
< 48mΩ
Type :
mosfet transistor
Description
60V N-Channel AlphaSGT HXY4264

Product Summary

VDS 30V
ID (at VGS=10V) 8.5A
RDS(ON) (at VGS=10V) < 24mΩ
RDS(ON) (at VGS = 4.5V) < 30mΩ
RDS(ON) (at VGS = 2.5V) < 48mΩ

General Description

The HXY4404 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and operation

with gate voltages as low as 2.5V. This device makes an

excellent high side switch for notebook CPU core DC-DC

conversion.

Applications

High efficiency power supply

Secondary synchronus rectifier

HXY4404 Mos Field Effect Transistor Low Gate Charge For Switching Application

Electrical Characteristics (T =25°C unless otherwise noted)

HXY4404 Mos Field Effect Transistor Low Gate Charge For Switching Application

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT =25°C.

D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

HXY4404 Mos Field Effect Transistor Low Gate Charge For Switching ApplicationHXY4404 Mos Field Effect Transistor Low Gate Charge For Switching ApplicationHXY4404 Mos Field Effect Transistor Low Gate Charge For Switching ApplicationHXY4404 Mos Field Effect Transistor Low Gate Charge For Switching ApplicationHXY4404 Mos Field Effect Transistor Low Gate Charge For Switching Application

Product tags

dual switching diode

,

updated power transistor npn

,

igbt gate voltage
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HXY4404 Mos Field Effect Transistor Low Gate Charge For Switching Application

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
HXY4404 Mos Field Effect Transistor Low Gate Charge For Switching Application

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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