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FS1A THRU FS1M Dual Switching Diode Surface Mount Fast Recovery Rectifier
FS1A THRU FS1M Dual Switching Diode Surface Mount Fast Recovery Rectifier
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
FS1A THRU FS1M
Type :
General Purpose Silicon Rectifier
Weight :
0.002 ounce, 0.07 grams
Feature :
High forward surge current capability
IFSM :
30.0Amps
I(AV) :
1.0Amp
VF :
1.3Volts
Description

FS1A THRU FS1M SURFACE MOUNT FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current -1.0 Ampere

FEATURES
  1. The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
  2. For surface mounted applications Low reverse leakage
  3. Built-in strain relief,ideal for automated placement High forward surge current capability
  4. High temperature soldering guaranteed: 250 C/10 seconds at terminals
  5. Glass passivated chip junction

MECHANICAL DATA

Case : JEDEC DO-214AC molded plastic body over passivated chip

Terminals : Solder plated, solderable per MIL-STD-750, Method 2026

Polarity : Color band denotes cathode end

Mounting Position : Any

Weight :0.002 ounce, 0.07 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number SYMBOLS FS1A FS1B FS1D FS1G FS1J FS1K FS1M UNITS
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 VOLTS
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 VOLTS
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 VOLTS

Maximum average forward rectified current

at TL=90 C

 I(AV) 1.0 Amp

Peak forward surge current

8.3ms single half sine-wave superimposed on rated load (JEDEC Method)

IFSM

30.0

Amps
Maximum instantaneous forward voltage at 1.0A VF 1.3 Volts

Maximum DC reverse current TA=25 C

at rated DC blocking voltage TA=100 C

 IR

5.0

50.0

 mA
Maximum reverse recovery time (NOTE 1) trr 150 250 500 ns
Typical junction capacitance (NOTE 2) CJ 15.0 pF
Typical thermal resistance (NOTE 3) RqJA 50.0 C/W
Operating junction and storage temperature range TJ,TSTG -65 to +150 C

Note:

1. Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3. Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

RATINGS AND CHARACTERISTIC CURVES FS1A THRU FS1M

FS1A THRU FS1M Dual Switching Diode Surface Mount Fast Recovery Rectifier

FS1A THRU FS1M Dual Switching Diode Surface Mount Fast Recovery Rectifier

FS1A THRU FS1M Dual Switching Diode Surface Mount Fast Recovery Rectifier

Product tags

2.5 hdd hot swap bay

,

3.5 hdd hot swap bay

,

surface mount schottky barrier rectifier
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FS1A THRU FS1M Dual Switching Diode Surface Mount Fast Recovery Rectifier

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
FS1A THRU FS1M Dual Switching Diode Surface Mount Fast Recovery Rectifier

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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