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HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate
HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
HXY2312
Product name :
Mosfet Power Transistor
Junction temperature: :
150℃
Material :
Silicon
Case :
Tape/Tray/Reel
Type :
mosfet transistor
Description
SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET

Product Summary

ID= 6.0 A VDSS=20v
RDS(on) <32 mΩ VGS =4.5V
RDS(on) <40 mΩ VGS =2.5V
FEATURE
TrenchFET Power MOSFET
APPLICATION
DC/DC Converters
Load Switching for Portable Applications
Maximum ratings (Ta=25℃ unless otherwise noted)
HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate
T =25 a ℃ unless otherwise specified
HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate
HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic EncapsulateHXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate
Product tags

ptfe encapsulated o-rings

,

p-channel mosfet sot-23

,

o ring ptfe encapsulated
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HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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