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D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching
D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
D882
Collector-Base Voltage :
40V
Collector Power Dissipation :
0.5W
Emitter-Base Voltage :
6V
Application :
mobile power supply/ led driver/motor control
Collector Current- Pulsed :
-0.3A
Description

SOT-89-3L Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN)

FEATURE

Power dissipation

Marking :A94

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 0.5 W

RӨJA

 Thermal Resistance from Junction to Ambient

250

 ℃/W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55~150 ℃




ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V
Collector cut-off current ICBO VCB= 40V, IE=0 1 µA
Collector cut-off current ICEO VCE= 30V, IB=0 10 µA
Emitter cut-off current IEBO VEB= 6V, IC=0 1 µA

DC current gain

 hFE(1) VCE=2V, IC= 1A 60 400
hFE(2) VCE=2V, IC= 100mA 32
Collector-emitter saturation voltage VCE(sat) IC= 2A, IB= 0.2 A 0.5 V
Base-emitter saturation voltage VBE(sat) IC= 2A, IB= 0.2 A 1.5 V

Transition frequency

fT

VCE= 5V , Ic=0.1A

f =10MHz

50

MHz


CLASSIFICATION OF hFE(1)

Rank R O Y GR
Range 60-120 100-200 160-320 200-400

Typical Characteristics

D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed SwitchingD882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching

D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching

D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching


Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 1.400 1.600 0.055 0.063
b 0.320 0.520 0.013 0.020
b1 0.400 0.580 0.016 0.023
c 0.350 0.440 0.014 0.017
D 4.400 4.600 0.173 0.181
D1 1.550 REF. 0.061 REF.
E 2.300 2.600 0.091 0.102
E1 3.940 4.250 0.155 0.167
e 1.500 TYP. 0.060 TYP.
e1 3.000 TYP. 0.118 TYP.
L 0.900 1.200 0.035 0.047



SOT-89-3L Suggested Pad Layout

D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching

SOT-89-3L Tape and Reel
D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching
D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching
D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching


Product tags

smd switching diode

,

fast switching power mosfet

,

igbt inverter circuit
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D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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