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2N5401 High Power PNP Transistor VCBO -160V For Electronic Components
2N5401 High Power PNP Transistor VCBO -160V For Electronic Components
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
2N5401
VCBO :
-160V
VCEO :
-150V
VEBO :
-5V
Usage :
Electronic Components
Tj :
150Š
Case :
Tape/Tray/Reel
Description

TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP)

FEATURE

Ÿ Switching and Amplification in High Voltage

Ÿ Applications such as Telephony

Ÿ Low Current

Ÿ High Voltage

2N5401 High Power PNP Transistor VCBO -160V For Electronic Components

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
2N5401 TO-92 Bulk 1000pcs/Bag
2N5401-TA TO-92 Tape 2000pcs/Box

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -160 V
VCEO Collector-Emitter Voltage -150 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -0.6 A
PC Collector Power Dissipation 625 mW
R0 JA Thermal Resistance From Junction To Ambient 200 Š / W
Tj Junction Temperature 150 Š
Tstg Storage Temperature -55~+150 Š


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=0 -160 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -150 V
Emitter-base breakdown voltage V(BR)EBO IE=-0.01mA,IC=0 -5 V
Collector cut-off current ICBO VCB=-120V,IE=0 -50 nA
Emitter cut-off current IEBO VEB=-3V,IC=0 -50 nA

DC current gain

 hFE(1) VCE=-5V, IC=-1mA 80
hFE(2) VCE=-5V, IC=-10mA 100 300
hFE(3) VCE=-5V, IC=-50mA 50
Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-50mA,IB=-5mA -1 V
Transition frequency fT VCE=-5V,IC=-10mA, f =30MHz 100 300 MHz


CLASSIFICATION OF hFE(2)

RANK A B C
RANGE 100-150 150-200 200-300

Typical Characteristics


2N5401 High Power PNP Transistor VCBO -160V For Electronic Components

2N5401 High Power PNP Transistor VCBO -160V For Electronic Components

2N5401 High Power PNP Transistor VCBO -160V For Electronic Components

2N5401 High Power PNP Transistor VCBO -160V For Electronic Components



Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0 1.600 0.063
h 0.000 0.380 0.000 0.015




TO-92 7DSH DQG 5HHO

2N5401 High Power PNP Transistor VCBO -160V For Electronic Components

2N5401 High Power PNP Transistor VCBO -160V For Electronic Components






Product tags

2sa1535 pnp power transistor

,

1n5400 diode specifications

,

2sc5200 equivalent transistor
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2N5401 High Power PNP Transistor VCBO -160V For Electronic Components

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
2N5401 High Power PNP Transistor VCBO -160V For Electronic Components

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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