SOT-89-3L Plastic-Encapsulate Transistors 2SD965A 2SD965A
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | -60 | V |
VCEO | Collector-Emitter Voltage | -60 | V |
VEBO | Emitter-Base Voltage | -4 | V |
IC | Collector Current | -500 | mA |
PC | Collector Power Dissipation | 225 | mW |
RΘJA | Thermal Resistance From Junction To Ambient | 556 | ℃/W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~+150 | ℃ |
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
Collector-base breakdown voltage | V(BR)CBO | IC=0.1mA, IE=0 | 40 | V | ||
Collector-emitter breakdown voltage | V(BR)CEO | IC= 1mA. IB=0 | 30 | V | ||
Emitter-base breakdown voltage | V(BR)EBO | IE= 10μA, IC=0 | 7 | V | ||
Collector cut-off current | ICBO | VCB= 10V,IE=0 | 0.1 | μA | ||
Emitter cut-off current | IEBO | VEB=7V, IC=0 | 0.1 | μA | ||
DC current gain | hFE(1) | VCE= 2 V, IC=1mA | 200 | |||
hFE’(2) | VCE= 2V, IC = 500mA | 230 | 800 | |||
hFE(3) | VCE= 2V, IC =2A | 150 | ||||
Collector-emitter saturation voltage | VCE(sat) | IC=3A, IB=0.1A | 1 | V | ||
Transition frequency | fT | VCE=6V, IC=50mA | 150 | MHz | ||
Out capacitance | Cob | VCB=20 V , IE=0, f=1MHZ | 50 | pF |
CLASSIFICATION OF hFE(2)
Rank | Q | R | S |
Range | 230-380 | 340-600 | 560-800 |
Package Outline Dimensions
Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
Min | Max | Min | Max | |
A | 0.900 | 1.150 | 0.035 | 0.045 |
A1 | 0.000 | 0.100 | 0.000 | 0.004 |
A2 | 0.900 | 1.050 | 0.035 | 0.041 |
b | 0.300 | 0.500 | 0.012 | 0.020 |
c | 0.080 | 0.150 | 0.003 | 0.006 |
D | 2.800 | 3.000 | 0.110 | 0.118 |
E | 1.200 | 1.400 | 0.047 | 0.055 |
E1 | 2.250 | 2.550 | 0.089 | 0.100 |
e | 0.950 TYP | 0.037 TYP | ||
e1 | 1.800 | 2.000 | 0.071 | 0.079 |
L | 0.550 REF | 0.022 REF | ||
L1 | 0.300 | 0.500 | 0.012 | 0.020 |
θ | 0° | 8° | 0° | 8° |
SOT-89-3L Tape and Reel