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MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
MMBTA55
Junction Temperature :
150 ℃
Type :
Triode Transistor
Application :
mobile power supply/ led driver/motor control
Material :
Silicon
Collector Current :
600 mA
Storage Temperature :
-55～+150℃
Description

SOT-23 Plastic-Encapsulate Transistors MMBTA55 TRANSISTOR (NPN)

FEATURE

l Driver Transistors

Marking :2H

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -4 V
IC Collector Current -500 mA
PC Collector Power Dissipation 225 mW
RΘJA Thermal Resistance From Junction To Ambient 556 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55～+150 ℃




ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -4 V
Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 µA
Collector cut-off current ICEO VCE=-60V, IB=0 -0.1 µA
DC current gain hFE(1) VCE=-1V, IC=-10mA 100 400
hFE(2) VCE=-1V, IC=-100mA 100
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.25 V
Base-emitter voltage VBE VCE=-1V, IC=-100mA -1.2 V
Transition frequency fT VCE=-1V,IC=-100mA, f=100MHz 50 MHz



Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.200 1.400 0.047 0.055
E1 2.250 2.550 0.089 0.100
e 0.950 TYP 0.037 TYP
e1 1.800 2.000 0.071 0.079
L 0.550 REF 0.022 REF
L1 0.300 0.500 0.012 0.020
θ 0° 8° 0° 8°



MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors



Product tags

inp semiconductor

,

p-type semiconductor

,

ptfe encapsulated o-rings
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MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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