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3DD13005HD55 Tip Power Transistors VCBO 600V Semiconductor Triode Type
3DD13005HD55 Tip Power Transistors VCBO 600V Semiconductor Triode Type
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
3DD13005HD55
Collector Power Dissipation :
1.5W
Junction Temperature :
150 ℃
VCBO :
600V
Product name :
semiconductor triode type
Collector Current :
3.5A
Type :
Triode Transistor
Description

TO-126 Plastic-Encapsulate Transistors 3DD13005HD55 TRANSISTOR (NPN)

FEATURE

Ÿ Power Switching Applications

Ÿ Good high temperature

Ÿ Low saturation voltage

Ÿ High speed switching

MARKING

JCET Logo 13005HD55=Device code

3DD13005HD55 Tip Power Transistors VCBO 600V Semiconductor Triode Type

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
3DD13005HD55 TO-126 Bulk 200pcs/Bag
3DD13005HD55-TU TO-126 Tube 60pcs/Tube


MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 800 V
VCEO Collector-Emitter Voltage 450 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current 3.5 A
PC Collector Power Dissipation 1.5 W
RθJA Thermal Resistance From Junction To Ambient 83.3 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


Ta=25 Š unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 800 V
Collector-emitter breakdown voltage V(BR)CEO* IC=10mA,IB=0 450 V
Emitter-base breakdown voltage V(BR)EBO IE= 1mA,IC=0 9 V
Collector cut-off current ICBO VCB=700V,IE=0 100 μA
Collector cut-off current ICEO VCE=450V,IB=0 100 μA
Emitter cut-off current IEBO VEB=9V,IC=0 100 μA

DC current gain

 hFE(1) * VCE=5V, IC=1A 10 40
hFE(2) * VCE=5V, IC=5mA 10
hFE(3) * VCE=5V, IC=2A 5

Collector-emitter saturation voltage

 VCE(sat)1 IC=1A,IB=200mA 0.3 V
VCE(sat)2 IC=2A,IB=500mA 0.6 V

Base-emitter saturation voltage

 VBE(sat)1 IC=2A,IB=500mA 1.2 V
VBE(sat)2 IC=500mA,IB=100mA 1 V
Emitter-collector forward voltage VFEC IC=2A 2 V
Transition frequency fT VCE=10V,IC=500mA 5 MHZ
Storage time ts IC=250mA (UI9600) 5 µs


Typical Characteristics

3DD13005HD55 Tip Power Transistors VCBO 600V Semiconductor Triode Type3DD13005HD55 Tip Power Transistors VCBO 600V Semiconductor Triode Type

TO-92 Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 2.500 2.900 0.098 0.114
A1 1.100 1.500 0.043 0.059
b 0.660 0.860 0.026 0.034
b1 1.170 1.370 0.046 0.054
c 0.450 0.600 0.018 0.024
D 7.400 7.800 0.291 0.307
E 10.600 11.000 0.417 0.433
e 2.290 TYP 0.090 TYP
e1 4.480 4.680 0.176 0.184
h 0.000 0.300 0.000 0.012
L 15.300 15.700 0.602 0.618
L1 2.100 2.300 0.083 0.091
P 3.900 4.100 0.154 0.161
Φ 3.000 3.200 0.118 0.126

3DD13005HD55 Tip Power Transistors VCBO 600V Semiconductor Triode Type



Product tags

common anode 7segment

,

diode stack sr u620806

,

2sa1535 pnp power transistor
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3DD13005HD55 Tip Power Transistors VCBO 600V Semiconductor Triode Type

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
3DD13005HD55 Tip Power Transistors VCBO 600V Semiconductor Triode Type

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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