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WST3078 High Current Transistor , Power Switch Transistor High Cell Density
WST3078 High Current Transistor , Power Switch Transistor High Cell Density
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
WST3078
Product name :
Mosfet Power Transistor
Features :
Surface mount package
RDSON :
50mΩ
Case :
Tape/Tray/Reel
Applications :
Load Switch
Description

WST3078 N&P-Ch MOSFET

Description

The WST3078 is the highest performance trench

N-ch and P-ch MOSFETs with extreme high cell

density , which provide excellent RDSON and gate

charge for most of the small power switching and

load switch applications.

The WST3078 meet the RoHS and Green Product

requirement with full function reliability approved.

Features
  • Advanced high cell density Trench technology
  • z Super Low Gate Charge
  • z Excellent Cdv/dt effect decline
  • z Green Device Available

Applications

  • High Frequency Point-of-Load Synchronous s
  • Small power switching for MB/NB/UMPC/VGA
  • Networking DC-DC Power System
  • Load Switch

Absolute Maximum Ratings

WST3078 High Current Transistor , Power Switch Transistor High Cell Density

Thermal Data
WST3078 High Current Transistor , Power Switch Transistor High Cell Density
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WST3078 High Current Transistor , Power Switch Transistor High Cell Density
Drain-Source Body Diode Characteristics
WST3078 High Current Transistor , Power Switch Transistor High Cell Density
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WST3078 High Current Transistor , Power Switch Transistor High Cell Density
Drain-Source Body Diode Characteristics
WST3078 High Current Transistor , Power Switch Transistor High Cell Density
Note :
1. The data tested by surface mounted on a 1 inch2
FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
N-Channel Typical Characteristics
WST3078 High Current Transistor , Power Switch Transistor High Cell DensityWST3078 High Current Transistor , Power Switch Transistor High Cell DensityWST3078 High Current Transistor , Power Switch Transistor High Cell Density
P-Channel Typical Characteristics
WST3078 High Current Transistor , Power Switch Transistor High Cell DensityWST3078 High Current Transistor , Power Switch Transistor High Cell DensityWST3078 High Current Transistor , Power Switch Transistor High Cell Density
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WST3078 High Current Transistor , Power Switch Transistor High Cell Density

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
WST3078 High Current Transistor , Power Switch Transistor High Cell Density

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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