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3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V
3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
3DD13001B
PC :
0.75W
VCEO :
420V
VCBO :
600V
Product name :
semiconductor triode type
Tj :
150℃
Type :
Triode Transistor
Description

TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN)

FEATURE

Ÿ power switching applications

MARKING

13001=Device code

S 6B=Code

3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
3DD13001B TO-92 Bulk 1000pcs/Bag
3DD13001B-TA TO-92 Tape 2000pcs/Box


MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector -Base Voltage 600 V
VCEO Collector-Emitter Voltage 420 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 0.2 A
PC Collector Power Dissipation 0.75 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55 ~150 ℃


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 100μA , IE=0 600 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 7 V
Collector cut-off current ICBO VCB= 600V , IE=0 100 μA
Collector cut-off current ICEO VCE= 400V, IB=0 200 μA
Emitter cut-off current IEBO VEB=7V, IC=0 100 μA

DC current gain

 hFE(1) VCE= 20V, IC= 20mA 14 29
hFE(2) VCE= 10V, IC= 0.25 mA 5
Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 10mA 1.2 V
Transition frequency fT

VCE= 20V, IC=20mA

f = 1MHz

 8 MHz
Fall time tf

IC=50mA, IB1=-IB2=5mA, VCC=45V

 0.3 μs
Storage time tS 1.5 μs


CLASSIFICATION OF hFE(2)

Range 14-17 17-20 20-23 23-26 26-29

TO-92 Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
Φ 1.600 0.063
h 0.000 0.380 0.000 0.015

3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V



Product tags

special 4d transponder chip

,

pvp k17

,

pnp mosfet
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3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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