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3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage
3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
3DD13002B
VCBO :
600V
VCEO :
400V
Collector-Base Voltage :
6V
Product name :
semiconductor triode type
Power mosfet transistor :
TO-92 Plastic-Encapsulate
Type :
Triode Transistor
Description

TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN)

FEATURE

Power Switching Applications

MARKING

13002B=Device code

Solid dot=Green molding compound device, if none,the normal device

XXX=Code

3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
3DD13002B TO-92 Bulk 1000pcs/Bag
3DD13002B-TA TO-92 Tape 2000pcs/Box


MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 600 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.8 A
PC Collector Power Dissipation 0.9 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55 ~ 150 ℃


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


Parameter

 Symbol Test conditions Min Typ Max

Unit
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 600 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA,IC=0 6 V

Collector cut-off current

 ICBO VCB= 600V,IE=0 100 µA
ICEO VCE= 400V,IB=0 100 µA
Emitter cut-off current IEBO VEB= 6 V, IC=0 100 µA

Dc c urrent gain

 hFE1 VCE= 10 V, IC=200mA 9 40
hFE2 VCE= 10 V, IC=0.25mA 5
Collector-emitter saturation voltage VCE(sat) IC=200mA, IB=40mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=200mA, IB=40mA 1.1 V

Transition frequency

fT

VCE=10V, IC=100mA

f =1MHz

5

MHz
Fall time tf

IC=1A, IB1=-IB2=0.2A VCC=100V

 0.5 µs
Storage time ts 2.5 µs


CLASSIFICATION OF hFE(2)

Range 9-15 15-20 20-25 25-30 30-35 35-40

Typical Characteristics

3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

TO-92 Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
Φ 1.600 0.063
h 0.000 0.380 0.000 0.015

Product tags

gds vci failure

,

gds vci v15

,

2sc5200 equivalent transistor
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3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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