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D965 NPN Transistor Circuit , NPN Power Transistor High Performance 
D965 NPN Transistor Circuit , NPN Power Transistor High Performance 
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
D965
VCBO :
42V
VCEO :
22V
VEBO :
6V
Product name :
semiconductor triode type
Collector Power Dissipation :
750mW
Tj :
150Š
Description

TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN)

FEATURE

Ÿ Audio Amplifier

Ÿ Flash Unit of Camera

Ÿ Switching Circuit

MARKING

D965=Device code

Solid dot=Green molding compound device,

if none,the normal device

Z=Rank of hFE, XXX=Code

D965 NPN Transistor Circuit , NPN Power Transistor High Performance 

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
D965 TO-92 Bulk 1000pcs/Bag
D965-TA TO-92 Tape 2000pcs/Box


MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Para meter Value Unit
VCBO Collector-Base Voltage 42 V
VCEO Collector-Emitter Voltage 22 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 5 A
PD Collector Power Dissipation 750 mW
R0 JA Thermal Resist ance f rom Junction to Ambient 166.7 Š / W
Tj Junction Temperature 150 Š
Tstg St orage Temperature -55 ~+150 Š


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 42 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 22 V
Emitter-base breakdown voltage V(BR)EBO IE= 10µA, IC=0 6 V
Collector cut-off current ICBO VCB=30V,IE=0 0.1 µA
Emitter cut-off current IEBO VEB=6V, IC=0 0.1 µA

DC current gain

 hFE(1) VCE=2V, IC= 0.15 mA 150
hFE(2) VCE= 2V,IC = 500 mA 340 2000
hFE(3) VCE=2V, IC = 2A 150
Collector-emitter saturation voltage VCE(sat) IC=3000mA,IB=100 mA 0.35 V
Transition frequency fT VCE=6V, IC=50mA,f=30MHz 150 MHz


CLASSIFICATION OF hFE(2)

Rank R T V
Range 340-600 560-950 900-2000

Typical Characteristics

D965 NPN Transistor Circuit , NPN Power Transistor High Performance D965 NPN Transistor Circuit , NPN Power Transistor High Performance D965 NPN Transistor Circuit , NPN Power Transistor High Performance D965 NPN Transistor Circuit , NPN Power Transistor High Performance 


Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0 1.600 0.063
h 0.000 0.380 0.000 0.015



Product tags

5401dm transistor

,

updated power transistor npn

,

2a npn transistor
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D965 NPN Transistor Circuit , NPN Power Transistor High Performance 

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
D965 NPN Transistor Circuit , NPN Power Transistor High Performance 

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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