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M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW
M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
M28S
VCBO :
40V
VCEO :
20V
PD :
625mW
Product name :
semiconductor triode type
Tstg :
-55 ~+150Š
Power Mosfet Transistor :
TO-92 Plastic-Encapsulate
Description

TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP)

FEATURE

Ÿ High DC Current Gain and Large Current Capability

MARKING

M28S=Device code

Solid dot=Green molding compound device,

if none,the normal device

Z=Rank of hFE, XXX=Code

M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
M28S TO-92 Bulk 1000pcs/Bag
M28S-TA TO-92 Tape 2000pcs/Box


MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Para meter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 1 A
PD Collector Power Dissipation 625 mW
R0 JA Thermal Resist ance f rom Junction to Ambient 200 Š / W
Tj Junction Temperature 150 Š
Tstg Storage Temperature -55 ~+150 Š


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 0.1mA ,IE=0 40 V
Collector-emitter breakdown voltage V(BR) CEO IC=1mA,IB=0 20 V
Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 6 V
Collector cut-off current ICBO VCB=40V,IE=0 1 µA
Collector cut-off current ICEO VCE=20V,IB=0 5 µA
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA

DC current gain

 hFE(1) VCE=1V, IC=1mA 290
hFE(2) VCE=1V, IC=100mA 300 1000
hFE(3) VCE=10V, IC=300mA 300
hFE(4) VCE=1V, IC=500mA 300
Collector-emitter saturation voltage VCE(sat) IC=600mA,IB=20mA 0.55 V
Transition frequency fT VCE=10V,IE=50mA ,f=30MHz 100 MHz


CLASSIFICATION OF hFE(2)

RANK B C D
RANGE 300-550 500-700 650-1000

Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0 1.600 0.063
h 0.000 0.380 0.000 0.015



Product tags

high perfomamce spark plug

,

p type mosfet

,

pnp mosfet
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M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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