Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
WSF6012
Product name :
Mosfet Power Transistor
Junction temperature: :
150℃
Material :
Silicon
Case :
Tape/Tray/Reel
Type :
mosfet transistor
Description
QM4803D​ N-Ch and P-Channel MOSFET

Description

The WSF6012 is the highest performance

trench N-ch and P-ch MOSFET with extreme

high cell density , which provide excellent

RDSON and gate charge for most of the

synchronous buck converter applications .

The WSF6012 meet the RoHS and Green

Product requirement , 100% EAS

guaranteed with full function reliability

approved.

Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available

Applications

  • z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
  • z Networking DC-DC Power System
  • z CCFL Back-light Inverter

Product Summery
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
Absolute Maximum Ratings

WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

Thermal Data
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
Guaranteed Avalanche Characteristics
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
Diode Characteristics
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
Guaranteed Avalanche Characteristics​
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
Diode Characteristics
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
Note :
1. The data tested by surface mounted on a 1 inch2
FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
N-Channel Typical Characteristics
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate ChargeWSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate ChargeWSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate ChargeWSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
P-Channel Typical Characteristics
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate ChargeWSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate ChargeWSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate ChargeWSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
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WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

Ask Latest Price
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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