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WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
WSF3012
Type :
Mosfet Power Transistor
Junction temperature: :
150℃
RDSON :
50mΩ
Features :
Super Low Gate Charge
Usage :
High Frequency Point-of-Load Synchronous
Description
WSF3012 N-Ch and P-Channel MOSFET

Description

The WSF3012 is the highest performance trench N-ch
and P-ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate charge for
most of the synchronous buck converter applications .
The WSF3012 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full function
reliability approved.

Product Summery

WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet

Features
  • z Advanced high cell density Trench technology
  • z Super Low Gate Charge
  • z Excellent CdV/dt effect decline
  • z 100% EAS Guaranteed
  • z Green Device Available

Applications

z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z CCFL Back-light Inverter

Absolute Maximum Ratings

WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet

Thermal Data
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
Guaranteed Avalanche Characteristics
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
Diode Characteristics
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
Guaranteed Avalanche Characteristics
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
Diode Characteristics
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A
4. The power dissipation is limited by 150℃ junction temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
N-Channel Typical Characteristics
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power MosfetWSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
P-Channel Typical Characteristics
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power MosfetWSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
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WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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