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HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A
HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
HXY4812
Product name :
Mosfet Power Transistor
VDS :
30v
Case :
Tape/Tray/Reel
VGS :
±20v
Continuous Drain Current :
6.5A
Description

HXY4812 30V Dual N-Channel MOSFET

General Description

The HXY4822A uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM

applications.

Product Summary

HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5AHXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A

Absolute Maximum Ratings T =25°C unless otherwise noted

HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A

Electrical Characteristics (T =25°C unless otherwise noted)

HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5AHXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A

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HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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