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HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m
HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
HXY4606
Product name :
Mosfet Power Transistor
VDS :
30V
RDS(ON) :
< 30m
VDS Model Number :
HXY4606
Features :
Surface mount package
Case :
Tape/Tray/Reel
Description

HXY4606 30V Complementary MOSFET

Description

The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The complementary MOSFETs may be used toform a level shifted high side switch, and for a host ofother applications.

HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m

N-CH Electrical Characteristics (TA=25℃unless otherwise noted)

HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30mHXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30mHXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30mHXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30mHXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30mHXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30mHXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30mHXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICALCOMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30mHXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30mHXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30mHXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30mHXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30mHXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m
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HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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