MachineU > China Products > Electrical Equipment & Supplies
N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive
N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive
Specifications
Brand Name :
Hua Xuan Yang
Model Number :
5N20DY TO-252
Certification :
RoHS、SGS
Place of Origin :
ShenZhen China
MOQ :
negotiation
Price :
Negotiated
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Delivery Time :
1 - 2 Weeks
Packaging Details :
Boxed
Product name :
Mosfet Power Transistor
Type :
N Channel
Drain-Source Voltage :
200 V
Gate-Source Voltage :
±20V
Applications :
LED Drive
Description

N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive

Mosfet Power Transistor Description

The AP50N20D uses advanced trench

technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other

Mosfet Power Transistor General Features


V DS =200V,I D =5A
R DS(ON) <520mΩ @ V GS =4.5V

Mosfet Power Transistor Application

Load switching

Hard switched and high frequency circuits Uninterruptible power supply

Package Marking and Ordering Information

Product ID Pack Marking Qty(PCS)
5N20D TO-252 5N20D 3000
5N20Y TO-251 5N20Y 4000

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 5 A
Drain Current-Pulsed (Note 1) IDM 20 A
Maximum Power Dissipation PD 30 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 4.17 ℃/W

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 200 - - V
Zero Gate Voltage Drain Current IDSS VDS=200V,VGS=0V - - 1 μA
Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.2 1.7 2.5 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2A - 520 580 mΩ
Forward Transconductance gFS VDS=15V,ID=2A - 8 - S
Dynamic Characteristics (Note4)
Input Capacitance Clss

VDS=25V,VGS=0V, F=1.0MHz

 - 580 - PF
Output Capacitance Coss - 90 - PF
Reverse Transfer Capacitance Crss - 3 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on)

VDD=100V, RL=15Ω VGS=10V,RG=2.5Ω

 - 10 - nS
Turn-on Rise Time tr - 12 - nS
Turn-Off Delay Time td(off) - 15 - nS
Turn-Off Fall Time tf - 15 - nS
Total Gate Charge Qg

VDS=100V,ID=2A, VGS=10V

 - 12 nC
Gate-Source Charge Qgs - 2.5 - nC
Gate-Drain Charge Qgd - 3.8 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=2A - - 1.2 V
Diode Forward Current (Note 2) IS - - 5 A

Notes:

  1. Repetitive Rating: Pulse width limited by maximum junction temperature.
  2. Surface Mounted on FR4 Board, t ≤ 10 sec.
  3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
  4. Guaranteed by design, not subject to production

N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive

N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive

N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive

N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive

Symbol

 Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 0.483 TYP. 0.190 TYP.
E 6.000 6.200 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 TYP. 0.114 TYP.
L2 1.400 1.700 0.055 0.067
L3 1.600 TYP. 0.063 TYP.
L4 0.600 1.000 0.024 0.039
Φ 1.100 1.300 0.043 0.051
θ 0° 8° 0° 8°
h 0.000 0.300 0.000 0.012
V 5.350 TYP. 0.211 TYP.

N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive

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Product Detail
Brand Name :
Hua Xuan Yang
Model Number :
5N20DY TO-252
Certification :
RoHS、SGS
Place of Origin :
ShenZhen China
MOQ :
negotiation
Price :
Negotiated
Contact Supplier
N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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