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10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch
10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch
10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch
10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch
Specifications
Brand Name :
Hua Xuan Yang
Model Number :
10N60
Certification :
RoHS、SGS
Place of Origin :
ShenZhen China
MOQ :
1000-2000 PCS
Price :
Negotiated
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Delivery Time :
1 - 2 Weeks
Packaging Details :
Boxed
Product name :
Mosfet Power Transistor
APPLICATION :
Power Management
FEATURE :
Excellent RDS(on)
Power mosfet transistor :
Enhancement Mode Power MOSFET
Description

10N60 K-MTQ 10A 600VN-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 10N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.

10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch

FEATURES

RDS(ON) < 1.0 Ω @ VGS = 10 V, ID = 5.0 A

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness

10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch

ORDERING INFORMATION

Ordering Number Package Pin Assignment Packing
Lead Free Halogen Free 1 2 3
10N60KL-TF3-T 10N60KG-TF3-T TO-220F G D S Tube
10N60KL-TF1-T 10N60KG-TF1-T TO-220F1 G D S Tube
10N60KL-TF2-T 10N60KG-TF2-T TO-220F2 G D S Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch

10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch

ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ±30 V
Continuous Drain Current ID 10 A
Pulsed Drain Current (Note 2) IDM 40 A
Avalanche Current (Note 2) IAR 8.0 A
Avalanche Energy Single Pulsed (Note 3) EAS 365 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 ns

Power Dissipation

 TO-220

PD

 156 W
TO-220F1 50 W
TO-220F2 52 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

4. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C

6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER SYMBOL RATING UNIT
Junction to Ambient θJA 62.5 °C/W
Junction to Case θJC 3.2 °C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 600 V
Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 μA
Gate- Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA
Reverse VGS = -30V, VDS = 0V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 5.0A 1.0 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz 1120 pF
Output Capacitance COSS 120 pF
Reverse Transfer Capacitance CRSS 13 pF
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1) QG VDS=50V, ID=1.3A, IG=100μA VGS=10V (Note 1,2) 28 nC
Gate-Source Charge QGS 8 nC
Gate-Drain Charge QGD 6 nC
Turn-On Delay Time (Note 1) tD(ON)

VDD =30V, ID =0.5A,

RG =25Ω, VGS=10V (Note 1,2)

 80 ns
Turn-On Rise Time tR 89 ns
Turn-Off Delay Time tD(OFF) 125 ns
Turn-Off Fall Time tF 64 ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current IS 10 A

Maximum Pulsed Drain-Source Diode

Forward Current

 ISM 40 A
Drain-Source Diode Forward Voltage (Note 1) VSD VGS = 0 V, IS = 10 A 1.4 V


Essentially independent of operating temperature.Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch

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10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch

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Product Detail
Brand Name :
Hua Xuan Yang
Model Number :
10N60
Certification :
RoHS、SGS
Place of Origin :
ShenZhen China
MOQ :
1000-2000 PCS
Price :
Negotiated
Contact Supplier
10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch
10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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