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OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode
OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode
Specifications
Brand Name :
Hua Xuan Yang
Model Number :
12N60
Certification :
RoHS、SGS
Place of Origin :
ShenZhen China
MOQ :
1000-2000 PCS
Price :
Negotiated
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Delivery Time :
1 - 2 Weeks
Packaging Details :
Boxed
Product name :
Mosfet Power Transistor
APPLICATION :
Power Management
FEATURE :
Excellent RDS(on)
Power mosfet transistor :
Enhancement Mode Power MOSFET
Type :
N Channel Mosfet Transistor
Description

OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

N Channel Mosfet Transistor DESCRIPTION

The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.

OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

N Channel Mosfet Transistor FEATURES

* RDS(ON) < 0.7 Ω @ VGS = 10 V, ID = 6.0 A

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness

OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

ORDERING INFORMATION

Ordering Number Package Pin Assignment Packing
Lead Free Halogen Free 1 2 3
12N60L-TF1-T 12N60G-TF1-T TO-220F1 G D S Tube
12N60L-TF3-T 12N60G-TF3-T TO-220F G D S Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNI T
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 600 V
Drain-Source Leakage Current IDSS VDS=600V, VGS=0V 1 μA
Gate- Source Leakage Current Forward IGSS VGS=30V, VDS=0V 100 nA
Reverse VGS=-30V, VDS=0V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6.0A 0.7 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS

VGS=0V, VDS=25V, f =1.0 MHz

 1465 pF
Output Capacitance COSS 245 pF
Reverse Transfer Capacitance CRSS 57 pF
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1) QG VDS=50V, ID=1.3A, IG=100μA VGS=10V (Note 1,2) 144 nC
Gate-Source Charge QGS 10 nC
Gate-Drain Charge QGD 27 nC
Turn-On Delay Time (Note 1) tD(ON)

VDD =30V, ID =0.5A,

RG =25Ω, VGS=10V (Note 1,2)

 81 ns
Turn-On Rise Time tR 152 ns
Turn-Off Delay Time tD(OFF) 430 ns
Turn-Off Fall Time tF 215 ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current IS 12 A

Maximum Pulsed Drain-Source Diode

Forward Current

 ISM 48 A
Drain-Source Diode Forward Voltage VSD VGS=0 V, IS=6.0 A 1.4 V
Reverse Recovery Time trr

VGS=0 V, IS=6.0 A,

dIF/dt=100 A/μs (Note 1)

 336 ns
Reverse Recovery Charge Qrr 2.21 μC

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

4. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C

6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)

Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 100 110 - V
Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA
Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.2 1.8 2.5 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID =8A 98 130 m Ω
Forward Transconductance gFS VDS=25V,ID=6A 3.5 - - S
Dynamic Characteristics (Note4)
Input Capacitance Clss

VDS=25V,VGS=0V, F=1.0MHz

 - 690 - PF
Output Capacitance Coss - 120 - PF
Reverse Transfer Capacitance Crss - 90 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on)

VDD=30V,ID=2A,RL=15Ω VGS=10V,RG=2.5Ω

 - 11 - nS
Turn-on Rise Time tr - 7.4 - nS
Turn-Off Delay Time td(off) - 35 - nS
Turn-Off Fall Time tf - 9.1 - nS
Total Gate Charge Qg

VDS=30V,ID=3A, VGS=10V

 - 15.5 nC
Gate-Source Charge Qgs - 3.2 - nC
Gate-Drain Charge Qgd - 4.7 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=9.6A - - 1.2 V
Diode Forward Current (Note 2) IS - - 9.6 A
Reverse Recovery Time trr

TJ = 25°C, IF =9.6A

di/dt = 100A/μs(Note3)

 - 21 nS
Reverse Recovery Charge Qrr - 97 nC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)


Essentially independent of operating temperature.Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

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Product Detail
Brand Name :
Hua Xuan Yang
Model Number :
12N60
Certification :
RoHS、SGS
Place of Origin :
ShenZhen China
MOQ :
1000-2000 PCS
Price :
Negotiated
Contact Supplier
OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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