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5N20DY 200V N-Channel Enhancement Mode MOSFET
5N20DY 200V N-Channel Enhancement Mode MOSFET
Specifications
Brand Name :
Hua Xuan Yang
Model Number :
5N20DY
Certification :
RoHS、SGS
Place of Origin :
ShenZhen China
MOQ :
1000-2000 PCS
Price :
Negotiated
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Delivery Time :
1 - 2 Weeks
Packaging Details :
Boxed
Product name :
Mosfet Power Transistor
APPLICATION :
Power Management
FEATURE :
Excellent RDS(on)
Power mosfet transistor :
Enhancement Mode Power MOSFET
Description

5N20D / Y 200V N-Channel Enhancement Mode MOSFET

DESCRIPTION

The AP50N20D uses advanced trench

technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other

5N20DY 200V N-Channel Enhancement Mode MOSFET5N20DY 200V N-Channel Enhancement Mode MOSFET

FEATURES

VDS =200V,ID =5A

RDS(ON) <520mΩ @ VGS=4.5V

Application

Load switching

Hard switched and high frequency circuits Uninterruptible power supply

5N20DY 200V N-Channel Enhancement Mode MOSFET

ORDERING INFORMATION

Product ID Pack Marking Qty(PCS)
5N20D TO-252 5N20D 3000
5N20Y TO-251 5N20Y 4000

Note: Pin Assignment: G: Gate D: Drain S: Source

ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 5 A
Drain Current-Pulsed (Note 1) IDM 20 A
Maximum Power Dissipation PD 30 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

4. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C

6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

THERMAL DATA

Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 4.17 ℃/W

ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)

Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 200 - - V
Zero Gate Voltage Drain Current IDSS VDS=200V,VGS=0V - - 1 μA
Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.2 1.7 2.5 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2A - 520 580 mΩ
Forward Transconductance gFS VDS=15V,ID=2A - 8 - S
Dynamic Characteristics (Note4)
Input Capacitance Clss

VDS=25V,VGS=0V, F=1.0MHz

 - 580 - PF
Output Capacitance Coss - 90 - PF
Reverse Transfer Capacitance Crss - 3 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on)

VDD=100V, RL=15Ω VGS=10V,RG=2.5Ω

 - 10 - nS
Turn-on Rise Time tr - 12 - nS
Turn-Off Delay Time td(off) - 15 - nS
Turn-Off Fall Time tf - 15 - nS
Total Gate Charge Qg

VDS=100V,ID=2A, VGS=10V

 - 12 nC
Gate-Source Charge Qgs - 2.5 - nC
Gate-Drain Charge Qgd - 3.8 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=2A - - 1.2 V
Diode Forward Current (Note 2) IS - - 5 A

Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

  • Essentially independent of operating temperature.

5N20DY 200V N-Channel Enhancement Mode MOSFET

5N20DY 200V N-Channel Enhancement Mode MOSFET

5N20DY 200V N-Channel Enhancement Mode MOSFET5N20DY 200V N-Channel Enhancement Mode MOSFET5N20DY 200V N-Channel Enhancement Mode MOSFET

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5N20DY 200V N-Channel Enhancement Mode MOSFET

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Product Detail
Brand Name :
Hua Xuan Yang
Model Number :
5N20DY
Certification :
RoHS、SGS
Place of Origin :
ShenZhen China
MOQ :
1000-2000 PCS
Price :
Negotiated
Contact Supplier
5N20DY 200V N-Channel Enhancement Mode MOSFET

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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