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Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking
Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking
Specifications
Brand Name :
Hua Xuan Yang
Model Number :
6N60
Certification :
RoHS、SGS
Place of Origin :
ShenZhen China
MOQ :
1000-2000 PCS
Price :
Negotiated
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Delivery Time :
1 - 2 Weeks
Packaging Details :
Boxed
Product name :
Mosfet Power Transistor
APPLICATION :
Power Management
FEATURE :
Excellent RDS(on)
Power mosfet transistor :
Enhancement Mode Power MOSFET
Description

6N60 Z 6.2A 600V N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.

FEATURES

RDS(ON) < 1.75Ω @ VGS = 10V, ID = 3.1A

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness

Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking

Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking

ORDERING INFORMATION

Ordering Number Package Pin Assignment Packing
Lead Free Halogen Free 1 2 3
6N60ZL-TF3-T 6N60ZG-TF3-T TO-220F G D S Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking

Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking

ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ±20 V
Avalanche Current (Note 2) IAR 6.2 A
Continuous Drain Current ID 6.2 A
Pulsed Drain Current (Note 2) IDM 24.8 A
Avalanche Energy Single Pulsed (Note 3) EAS 252 mJ
Repetitive (Note 2) EAR 13 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 ns
Power Dissipation PD 40 W
Junction Temperature TJ +150 °C
Operating Temperature TOPR -55 ~ +150 °C
Storage Temperature TSTG -55 ~ +150 °C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

4. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C

6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER SYMBOL RATING UNIT
Junction to Ambient θJA 62.5 °C/W
Junction to Case θJC 3.2 °C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 600 V

Drain-Source Leakage Current

IDSS

 VDS = 600V, VGS = 0V 10 μA
VDS = 480V, VGS = 0V, TJ=125°C 100 μA
Gate- Source Leakage Current Forward IGSS VGS = 20V, VDS = 0V 10 μA
Reverse VGS = -20V, VDS = 0V -10 μA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.53 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.1A 1.4 1.75 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz 770 1000 pF
Output Capacitance COSS 95 120 pF
Reverse Transfer Capacitance CRSS 10 13 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON)

VGS=0~10V, VDD=30V, ID =0.5A, RG =25Ω

(Note 1, 2)

 45 60 ns
Turn-On Rise Time tR 95 110 ns
Turn-Off Delay Time tD(OFF) 185 200 ns
Turn-Off Fall Time tF 110 125 ns
Total Gate Charge QG VGS=10V, VDD=50V, ID=1.3A IG=100μA (Note 1, 2) 32.8 nC
Gate-Source Charge QGS 7.0 nC
Gate-Drain Charge QGD 9.8 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 6.2 A 1.4 V
Maximum Continuous Drain-Source Diode Forward Current IS 6.2 A

Maximum Pulsed Drain-Source Diode

Forward Current

 ISM 24.8 A
Reverse Recovery Time trr

VGS = 0 V, IS = 6.2 A,

dIF/dt = 100 A/μs (Note 1)

 290 ns
Reverse Recovery Charge QRR 2.35 μC


Essentially independent of operating temperature.Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent MarkingVarious Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking

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Product Detail
Brand Name :
Hua Xuan Yang
Model Number :
6N60
Certification :
RoHS、SGS
Place of Origin :
ShenZhen China
MOQ :
1000-2000 PCS
Price :
Negotiated
Contact Supplier
Various Mosfet Power Transistor 6N60 Z 6.2A 600V Radio Amplifier Equivalent Marking

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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