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W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
Specifications
Brand Name :
FGD
Model Number :
fgd t-002
Certification :
ISO9001, ISO14000
Place of Origin :
China
MOQ :
50KG
Price :
USD180-USD2800/KG
Payment Terms :
L/C, T/T, Western Union, MoneyGram
Supply Ability :
50 Metric Tons per Month
Delivery Time :
3-5 days
Packaging Details :
WOODEN CASE
Shape :
Customised
Chemical Composition :
W
Relative Density (%) :
≥99
Ra :
≤1.6
Application :
thickness and smooth erosion
Product name :
Ultra high purity material tungsten alloy w sputtering target
Purity (wt.%) :
99.9%~99.995%
Grain Size :
≤50
Dimension (mm) :
≤D.452
Description

Ultra high purity tungsten alloy W-Ti sputtering target Plate Planar Billet for Semiconductor Physical Vapor Deposition

Tungsten-titanium (WTi) films are known to act as the effective diffusion barrier between Al and Si in semiconductor and photovoltaic cells industry. WTifilms are typically deposited as thin films by physical vapor deposition (PVD) through sputtering of a WTialloy target. It is desirable to produce a target that will provide film uniformity,minimum particle generation during sputtering, and desired electrical properties. In order to meet the reliability requirements for diffusion barriers of complex integrated circuits, the WTialloy target must have high purity and high density.

Type

W

(wt.%)

Ti

(wt.%)

Purity

(wt.%)

Relative Density

(%)

 Grain Size (µm) Dimension (mm)

Ra

(µm)
WTi-10 90 10 99.9-99.995 ≥99 ≤20 ≤Ø452 ≤1.6
WTi-20 80 20 99.9-99.99 ≥99 ≤20 ≤Ø452 ≤1.6
WTi 70-90 10-30 99.9-99.995 ≥99 ≤20 ≤Ø452

≤1.6

W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot

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W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot

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Product Detail
Brand Name :
FGD
Model Number :
fgd t-002
Certification :
ISO9001, ISO14000
Place of Origin :
China
MOQ :
50KG
Price :
USD180-USD2800/KG
Contact Supplier
W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot
W-Ti Metal Sputtering Targets Planar Billet For Semiconductor Physical Vapor Depot

Luoyang Forged Tungsten-Molybdenum Material Co., Ltd.

Site Member
6 Years
henan, luoyang
Since 2001
Business Type :
Manufacturer
Main Products :
Tungsten Metal Alloy, Titanium Metal Alloy, Molybdenum Alloys
Total Annual :
1000000-100000000
Employee Number :
100~500
Certification Level :
Site Member
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