S6931 01 Infrared Photoelectric Sensor Molded Into A Silicon Photodiode
S6931-01 Is Molded Into A Silicon Photodiode Enclosed In Transparent Plastic
Features:
Detailed parameter
Receiving surface 2.4 × 2.8mm
The pixel number is 1
Packaging plastics
Cooling non-cooling type
Reverse voltage (Max.) 10 V
Sensitivity wavelength range 320 to 1000 nm
Maximum sensitivity wavelength (typical value) 720 nm
Photosensitivity (typical value) 0.48A /W
Dark current (Max.) 20 pA
Rise time (typical value) 0.5μs
Junction capacitance (typical value) 200 pF
Typical values Ta=25°C, sensitivity: λ = λp, dark current: VR = 1 V, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated
Specifications:
Dark current (Max.) | 10V |
Operating temperature | Topr |
Storage temperature | Tstg |
Center wavelength | CWL |
Photosensitivity | λ=254 nm |