Specifications
Brand Name :
Hamamatsu
Model Number :
S2386-8K
Place of Origin :
Japan
MOQ :
5
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
1501/pcs/pre
Delivery Time :
3-5work days
Packaging Details :
Tubes of
photographic area is :
5.8 × 5.8mm
Number of pixels :
1
Refrigeration and :
Non - cooled
encapsulation type is :
to-8
Reverse voltage (Max.) :
30V
Description

Product Description:

S2386-8K Silicon Photodiodes Are Used For Universal Photometric Determination In Visible To Near Infrared Bands

Features:

Suitable for visible light to near infrared band, universal photometric determination

Product features

● High sensitivity in visible to near infrared band

● Low dark current

● High reliability

● High linearity

Rise time (typical value). 10 mu s

Junction capacitance (typical value) 4300 pF

Measurement condition TYP.TA =25 ℃, Unless otherwise noted,Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz

Specifications:

spectral response range is 320 to 1100 nm
Peak sensitivity wavelength (typical value) 960 nm
Sensitivity (typical value) 0.6 A/W
Dark current (Max.) 50 pA

S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode

S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode

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S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode

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Brand Name :
Hamamatsu
Model Number :
S2386-8K
Place of Origin :
Japan
MOQ :
5
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
1501/pcs/pre
Contact Supplier
S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode
S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode

ShenzhenYijiajie Electronic Co., Ltd.

Verified Supplier
3 Years
guangdong, shenzhen
Since 2006
Business Type :
Manufacturer, Trading Company
Total Annual :
900000-1000000
Employee Number :
50~80
Certification Level :
Verified Supplier
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