Product Description:
S1226-8BQ Silicon Photodiodes Are Suitable For UV To Visible Light Precision Photometry To Suppress NIR Sensitivity
Features:
● High UV sensitivity: QE = 75% (λ=200 nm)
● Suppress NIR sensitivity
● Low dark current
● High reliability
Dark current (maximum) 20 pA
Rise time (typical value). 2 mu s
Junction capacitance (typical value) 1200 pF
Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
Reverse voltage (Max.) | 5V |
spectral response range is | 190 to 1000 nm |
peak sensitivity wavelength (typical value) was | 720 nm |
Type | infrared photoelectricity |