Specifications
Brand Name :
Hamamatsu
Model Number :
S1226-8BQ
Place of Origin :
Japan
MOQ :
5
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
1501/pcs/pre
Delivery Time :
3-5work days
Packaging Details :
In a box
photographic area is :
5.8 × 5.8mm
Number of pixels :
1
Refrigeration and :
Non - cooled
Encapsulated :
Metal
encapsulation type is :
TO-8
Description

Product Description:

S1226-8BQ Silicon Photodiodes Are Suitable For UV To Visible Light Precision Photometry To Suppress NIR Sensitivity

Features:

● High UV sensitivity: QE = 75% (λ=200 nm)

● Suppress NIR sensitivity

● Low dark current

● High reliability

Dark current (maximum) 20 pA

Rise time (typical value). 2 mu s

Junction capacitance (typical value) 1200 pF

Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz

Specifications:

Reverse voltage (Max.) 5V
spectral response range is 190 to 1000 nm
peak sensitivity wavelength (typical value) was 720 nm
Type infrared photoelectricity

S1226-8BQ U Type Infrared Photoelectric Sensor For Precision Photometry

S1226-8BQ U Type Infrared Photoelectric Sensor For Precision Photometry

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S1226-8BQ U Type Infrared Photoelectric Sensor For Precision Photometry

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Brand Name :
Hamamatsu
Model Number :
S1226-8BQ
Place of Origin :
Japan
MOQ :
5
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
1501/pcs/pre
Contact Supplier
S1226-8BQ U Type Infrared Photoelectric Sensor For Precision Photometry
S1226-8BQ U Type Infrared Photoelectric Sensor For Precision Photometry

ShenzhenYijiajie Electronic Co., Ltd.

Verified Supplier
3 Years
guangdong, shenzhen
Since 2006
Business Type :
Manufacturer, Trading Company
Total Annual :
900000-1000000
Employee Number :
50~80
Certification Level :
Verified Supplier
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