Product Description:
G8370-81 InGaAs PIN Photodiode Low PDL(Polarization Dependent Loss)
Features:
Low PDL(polarization dependent loss)
InGaAs PIN photodiode G8370-81 has low PDL (polarization dependent loss), large shitter resistance and very low noise at 1.55μm.
Product features
Low PDL(polarization dependent loss)
● Low noise, low dark current
● Large photographic area
● Photosensitive area: φ1 mm
Noise equivalent power (typical value) 2×10-14 W/ hz1/2
Measurement conditions TYP.TA =25 ℃, Photosensitivity: λ=λp, Dark Current: VR=1 V, Cutoff frequency: VR=1 V, RL=50 ω, -3 dB, Terminal capacitance: VR=1 V, F =1 MHz, unless otherwise noted
Specifications:
peak sensitivity wavelength (typical value) was | 1.55 μm |
Sensitivity (typical value) | 1.1 A/W |
Dark current (maximum) | 5 nA |
Cutoff frequency (typical value) | 35 MHz |
Junction capacitance (typical value) | 90 pF |
Noise equivalent power (typical value) | 2×10-14 W/ hz1/2 |