Product Description:

The spectral response range of the UV Photodiode Sensor is from 190 to 1100 Nm, which allows it to detect a wide range of light frequencies. This feature makes it ideal for use in various applications such as medical equipment, industrial control systems, and scientific research. The sensor is equipped with a Si photodiode, which provides high sensitivity and excellent signal-to-noise ratio.

The UV Photodiode Sensor has a reverse voltage (max) of 5 V, which ensures that it is safe to use and does not cause any damage to the circuit. Its photosensitive area is 2.4 × 2.4 mm, which provides a large light detection area and enhances its sensitivity. This makes it an excellent choice for applications that require high accuracy and precision.

The rise time (typical) of the UV Photodiode Sensor is 0.2 μs, which means that it responds quickly to changes in light intensity. This feature makes it suitable for use in applications that require fast response times, such as in optical communications and robotics. The Si photodiode technology used in this sensor ensures low noise and high reliability, making it an excellent choice for demanding applications.

In conclusion, the UV Photodiode Sensor is a high-quality light sensing device that provides reliable and accurate measurements of light in the UV spectrum. Its metal-ceramic packaging ensures durability and resistance to external factors, while its Si photodiode technology provides high sensitivity and excellent signal-to-noise ratio. Its wide spectral response range, large photosensitive area, and fast response time make it an excellent choice for various applications.

Features:

• Product Name: UV Photodiode Sensor
• Packaging: Ceramic
• Peak sensitivity wavelength (typical): 960 Nm
• Photosensitive area: 2.4 × 2.4 Mm
• Reverse voltage (max): 5 V
• Dark current (max): 30 Pa
• Si Photodiode
• High UV Sensitivity
• Low Capacitance

Technical Parameters:

This is a Si Photodiode sensor with photosensitive area of 2.4 × 2.4 mm, reverse voltage (max) of 5 V, and dark current (max) of 30 Pa. It has only one element and a peak sensitivity wavelength (typical) of 960 nm. The photosensitivity (typical) is 0.5 A/W. The sensor is packaged in ceramic and has a terminal capacitance (typical) of 65 pF. Its rise time (typical) is 0.2 μs, and the spectral response range is from 190 to 1100 nm, making it suitable for UV to IR applications.

Applications:

The S1337-33BQ model has a photosensitive area of 2.4 × 2.4 mm, making it ideal for detecting small UV signals. Additionally, it has low capacitance, which allows for fast response times and accurate measurements. Its packaging is made of metal ceramic, which provides excellent thermal stability and durability, ensuring that the sensor can withstand harsh environments.

One of the key features of the S1337-33BQ is its low dark current, which has a maximum of 30 Pa. This means that the sensor can operate effectively in low light conditions without producing a significant amount of noise. It also has a maximum reverse voltage of 5 V, making it suitable for use in circuits with high voltage levels.

The S1337-33BQ UV Photodiode Sensor can be used in a wide range of scenarios, including industrial manufacturing, medical equipment, and scientific research. In industrial manufacturing, it can be used for quality control and process monitoring in UV curing and sterilization applications. In medical equipment, it can be used for UV phototherapy and UV disinfection. In scientific research, it can be used for UV spectroscopy and photolithography.

In conclusion, the Hamamatsu S1337-33BQ UV Photodiode Sensor is a versatile and reliable device that can be used in a variety of applications. With its high UV sensitivity, low capacitance, and metal ceramic packaging, it is an ideal choice for those looking for a high-performance UV sensor.

Customization:

Customize your Hamamatsu S1337-33BQ UV Photodiode Sensor to meet your specific needs with our product customization services. Our team of experts can tailor the sensor to your requirements, including:

• Metal Ceramic packaging for added durability
• Increase in Si Photodiode sensitivity for high UV detection
• Reverse voltage (max) up to 5 V
• Rise time (typical) as low as 0.2 μs
• Reduction in Dark current (max) to 30 Pa
• Cooling options, including uncooled

Our Hamamatsu S1337-33BQ UV Photodiode Sensor originally comes from Japan and has a proven track record of reliability and accuracy. Let us help you get the most out of your UV detection with our product customization services.

Support and Services:

The UV Photodiode Sensor product technical support and services include:

• Expert assistance with installation and setup
• Troubleshooting for any issues or malfunctions
• Repairs and replacements for defective products
• Regular maintenance and calibration services
• Access to product manuals, FAQs, and technical documentation

FAQ:

A: The spectral response range of this sensor is 200-400 nm.

A: The typical dark current of this sensor is 0.2 nA.

A: The active area of this sensor is 0.06 mm².

A: The maximum reverse voltage of this sensor is 20 V.

A: The Hamamatsu S1337-33BQ UV Photodiode Sensor is manufactured in Japan.