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YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band
YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band
YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band
YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band
YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band
YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band
YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band
YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band
Specifications
Brand Name :
HAMAMATSU
Model Number :
S12060-10
Place of Origin :
Japan
MOQ :
1
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
2200
Delivery Time :
3 days
Packaging Details :
piping
coefficient :
0.4V /°C
Package category :
TO18
Maximum sensitivity wavelength (typical value) :
800 nm
Dark current (Max.) :
2 nA
Description

Product Description:

S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band

Features:

Low temperature coefficient for 800 nm band

This is an 800 nm near-infrared silicon APD for stable operation over a wide temperature range. This is suitable for applications such as light wave distance meters and spatial light transmission (free space optics).

peculiarity

- Breakdown voltage temperature coefficient: 0.4V /°C

- High speed response

- High sensitivity and low noise

Type Near infrared type

(Low temperature coefficient)

Receiving surface φ1mm

Encapsulation metal

Package category TO-18

Maximum sensitivity wavelength (typical value) 800 nm

Sensitivity wavelength range 400 to 1000 nm

Photosensitivity (typical value) 0.5A /W

Dark current (Max.) 2 nA

Cut-off frequency (typical value) 600 MHz

Junction capacitance (typical) 6 pF

Breakdown voltage (typical value) 200 V

Breakdown voltage temperature coefficient (typical value) 0.4 V/°C

Gain rate (typical value) 100

Measurement conditions Typical value Ta = 25°C, unless otherwise stated,

Sensitivity: λ = 800 nm, M = 1

Specifications:

Reverse voltage (Max.) 5 V
Spectral response range 400 to 1000 nm
Maximum sensitivity wavelength (typical value) 800 nm
Photosensitivity (typical value) 0.5A /W

YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band

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YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band

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Product Detail
Brand Name :
HAMAMATSU
Model Number :
S12060-10
Place of Origin :
Japan
MOQ :
1
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
2200
Contact Supplier
YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band
YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band
YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band
YJJ S12060-10 Silicon APD Low Temperature Coefficient For 800 nm Band

ShenzhenYijiajie Electronic Co., Ltd.

Verified Supplier
3 Years
guangdong, shenzhen
Since 2006
Business Type :
Manufacturer, Trading Company
Main Products :
Oxygen Gas Sensor, Electrochemical Gas Sensor, Gas Sensor
Total Annual :
900000-1000000
Employee Number :
50~80
Certification Level :
Verified Supplier
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