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High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI
High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI
Specifications
Brand Name :
BonTek
Model Number :
LNOI Wafer
Certification :
ISO:9001, ISO:14001
Place of Origin :
China
MOQ :
25 pcs
Price :
$2000/pc
Payment Terms :
T/T
Supply Ability :
1000 pcs/Month
Delivery Time :
1-4 weeks
Packaging Details :
Cassette/ Jar package, vaccum sealed
Product :
Piezo On Insulation
Diameter :
4 inch, 6 inch
Top Layer :
Lithium Niobate
Top Thickness :
300~600nm
Insolation :
SiO2 Thermal Oxide
Insolation Thickness :
2000±15nm; 3000±50nm; 4700±100nm
Substrate :
Silicon
Application :
Optical Waveguides and Microwaveguides
Description

Enabling High-Speed Modulation And Wide Bandwidth With LNOI POI

Piezo on Insulation (POI) refers to a technology where piezoelectric materials are integrated onto an insulating substrate. This allows for the utilization of the piezoelectric effect while providing electrical isolation. The POI technology enables the development of various devices and systems that harness the unique properties of piezoelectric materials for sensing, actuation, and energy harvesting applications.

POI (Piezo on Insulation) technology finds various applications in different fields due to its ability to combine the advantages of piezoelectric materials with electrical isolation. Such as sensors, Microelectromechanical Systems and Energy Storage and Generation.

The versatility of integrating piezoelectric materials onto an insulating substrate opens up possibilities for innovative solutions in diverse fields, including electronics, energy, healthcare, and more.

LNOI Wafer
Structure LN / SiO2 / Si LTV / PLTV < 1.5 μm ( 5∗ 5 mm2 ) / 95%
Diameter Φ100 ± 0.2 mm Edge Exclution 5 mm
Thickness 500 ± 20 μm Bow Within 50 μm
Primary Flat Length 47.5 ± 2 mm
57.5 ± 2 mm		 Edge Trimming 2 ± 0.5 mm
Wafer Beveling R Type Environmental Rohs 2.0
Top LN Layer
Average Thickness 400/600±10 nm Uniformity < 40nm @17 Points
Refraction index no > 2.2800, ne < 2.2100 @ 633 nm Orientation X axis ± 0.3°
Grade Optical Surface Ra < 0.5 nm
Defects >1mm None;
≦1 mm Within 300 total		 Delamination None
Scratch >1cm None;
≦1cm Within 3		 Primary Flat Perpendicular to +Y Axis ± 1°
Isolation SiO2 Layer
Average Thickness 2000nm ± 15nm 3000nm ± 50nm 4700nm ± 100nm Uniformity < ±1% @17 Points
Fab. Method Thermal Oxide Refraction index 1.45-1.47 @ 633 nm
Substrate
Material Si Orientation <100> ± 1°
Primary Flat Orientation <110> ± 1° Resistivity > 10 kΩ·cm
Backside Contamination No visible stain Backside Etch

High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POIHigh Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI


High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI

High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI

Product tags

piezoelectric output

,

pulse width modulation generator

,

40khz piezo transducer
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High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI

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Product Detail
Brand Name :
BonTek
Model Number :
LNOI Wafer
Certification :
ISO:9001, ISO:14001
Place of Origin :
China
MOQ :
25 pcs
Price :
$2000/pc
Contact Supplier
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High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI

Hangzhou Freqcontrol Electronic Technology Ltd.

Verified Supplier
4 Years
shanghai, hangzhou
Since 1999
Business Type :
Manufacturer, Trading Company
Main Products :
Piezoelectric Wafer, LiNbO3 Wafer, LiTaO3 Wafer
Total Annual :
800M-1500M
Employee Number :
10~99
Certification Level :
Verified Supplier
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