Semiconductor Sapphire Wafer Sapphire Windows Piezoelectric Wafer
Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. It is a superior window material for many IR applications from 3µm to 5µm. C-plane sapphire substrates are widely used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes, while R-plane sapphire substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.
Item | 3-inch C-plane(0001) 500μm Sapphire Wafers | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Grade | Prime, Epi-Ready | |
Surface Orientation | C-plane(0001) | |
C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
Diameter | 76.2 mm +/- 0.1 mm | |
Thickness | 500 μm +/- 25 μm | |
Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
Primary Flat Length | 22.0 mm +/- 1.0 mm | |
Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
TTV | < 15 μm | |
BOW | < 15 μm | |
WARP | < 15 μm | |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
25 pieces in one cassette packaging or single piece packaging. |
Item | 4-inch C-plane(0001) 650μm Sapphire Wafers | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Grade | Prime, Epi-Ready | |
Surface Orientation | C-plane(0001) | |
C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
Diameter | 100.0 mm +/- 0.1 mm | |
Thickness | 650 μm +/- 25 μm | |
Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
Primary Flat Length | 30.0 mm +/- 1.0 mm | |
Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
TTV | < 20 μm | |
BOW | < 20 μm | |
WARP | < 20 μm | |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
25 pieces in one cassette packaging or single piece packaging. |
Item | 6-inch C-plane(0001) 1300μm Sapphire Wafers | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Grade | Prime, Epi-Ready | |
Surface Orientation | C-plane(0001) | |
C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
Diameter | 150.0 mm +/- 0.2 mm | |
Thickness | 1300 μm +/- 25 μm | |
Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
Primary Flat Length | 47.0 mm +/- 1.0 mm | |
Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
(DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
TTV | < 25 μm | |
BOW | < 25 μm | |
WARP | < 25 μm | |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
25 pieces in one cassette packaging or single piece packaging. |
Acceptance Check