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R-plane 1102 C-plane 0001 Sapphire Wafer For IR and UV Wavelength Applications
R-plane 1102 C-plane 0001 Sapphire Wafer For IR and UV Wavelength Applications
R-plane 1102 C-plane 0001 Sapphire Wafer For IR and UV Wavelength Applications
R-plane 1102 C-plane 0001 Sapphire Wafer For IR and UV Wavelength Applications
R-plane 1102 C-plane 0001 Sapphire Wafer For IR and UV Wavelength Applications
R-plane 1102 C-plane 0001 Sapphire Wafer For IR and UV Wavelength Applications
Specifications
Brand Name :
BonTek
Model Number :
Sapphire (Al2O3)
Certification :
ISO:9001
Place of Origin :
China
MOQ :
5 Pieces
Price :
Negotiable
Payment Terms :
T/T
Supply Ability :
10000 pieces/Month
Delivery Time :
1-4 weeks
Packaging Details :
Cassette, Jar, Film package
Material :
Sapphire Wafer
Growth :
Kyropoulos method
Melting Point :
2040 degrees C
Thermal Conductivity :
27.21 W/(m x K) at 300 K
Thermal Expansion :
5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K
Hardness :
Knoop 2000 kg/mm 2 with 2000g indenter
Specific Heat Capacity :
419 J/(kg x K)
Dielectric Constant :
11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz
Description

R-plane 1102 C-plane 0001 Sapphire Wafer For IR and UV Wavelength Applications

The growth method refers to the process by which the ingot of single crystal sapphire is produced. For most sapphire wafers this is the Kyropoulos method (abbreviated to Ky or Kr). The Kyropoulos method is a continuation of the Czochralski method (CZ) which is used in the manufacture of silicon wafers. The Kr method allows for the production of very large ingots of single crystal sapphire that can then be processed into wafers.

Typical cuts of sapphire are R-plane (1102), C-Plane (0001), A-plane (1120), M-plane (1010) and N-plane (1123). Orientation affects the physical properties of the sapphire wafers – and in particular how it integrates and lattice matches with other materials.

R-plane 1102 C-plane 0001 Sapphire Wafer For IR and UV Wavelength ApplicationsR-plane 1102 C-plane 0001 Sapphire Wafer For IR and UV Wavelength ApplicationsR-plane 1102 C-plane 0001 Sapphire Wafer For IR and UV Wavelength Applications

OPTICAL PROPERTIES of SAPPHIRE Al2O3

Transmission Range

0.17 to 5.5 microns

Refractive Index

1.75449 (o) 1.74663 (e) at 1.06 microns

Reflection Loss

at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2%

Index of Absorption

0.3 x 10-3 cm-1 at 2.4 microns

dN/dT

13.7 x 10-6 at 5.4 microns

dn/dm = 0

1.5 microns

PHYSICAL PROPERTIES of SAPPHIRE Al2O3

Density

3.97 g/cm3

Melting Point

2040 degrees C

Thermal Conductivity

27.21 W/(m x K) at 300 K

Thermal Expansion

5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K

Hardness

Knoop 2000 kg/mm 2 with 2000g indenter

Specific Heat Capacity

419 J/(kg x K)

Dielectric Constant

11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz

Young's Modulus (E)

335 GPa

Shear Modulus (G)

148.1 GPa

Bulk Modulus (K)

240 GPa

Elastic Coefficients

C11=496 C12=164 C13=115
C33=498 C44=148

Apparent Elastic Limit

275 MPa (40,000 psi)

Poisson Ratio

0.25

Orientation

R-plane, C-plane, A-plane, M-plane or a specified orientation

Orientation Tolerance

± 0.3°

Diameter

2 inches, 3 inches, 4 inches, 6 inches, 8 inches or others

Diameter Tolerance

0.1mm for 2 inches, 0.2mm for 3 inches, 0.3mm for 4 inches, 0.5mm for 6 inches

Thickness

0.25mm, 0.33mm, 0.43mm, 0.65mm, 1mm or others;

Thickness Tolerance

25μm

Primary Flat Length

16.0±1.0mm for 2 inches, 22.0±1.0mm for 3 inches, 30.0±1.5mm for 4 inches, 47.5/50.0±2.0mm for 6 inches

Primary Flat Orientation

A-plane (1 1-2 0 ) ± 0.2°; C-plane (0 0-0 1 ) ± 0.2°, Projected C-Axis 45 +/- 2°

TTV

≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches

BOW

≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches

Front Surface

Epi-Polished (Ra< 0.3nm for C-plane, 0.5nm for other orientations)

Back Surface

Fine ground (Ra=0.6μm~1.4μm) or Epi-polished

Packaging

Packaged in a class 100 clean room environment

R-plane 1102 C-plane 0001 Sapphire Wafer For IR and UV Wavelength Applications

Acceptance Check

R-plane 1102 C-plane 0001 Sapphire Wafer For IR and UV Wavelength Applications

1. The product is fragile. We have adequately packed it and labeled it fragile. We deliver through excellent domestic and international express companies to ensure transportation quality.

2. After receiving the goods, please handle with care and check whether the outer carton is in good condition. Carefully open the outer carton and check whether the packing boxes are in alignment. Take a picture before you take them out.

3. Please open the vacuum package in a clean room when the products are to be applied.

4. If the products are found damaged during courier, please take a picture or record a video immediately. DO NOT take the damaged products out of the packaging box! Contact us immediately and we will solve the problem well.

Product tags

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R-plane 1102 C-plane 0001 Sapphire Wafer For IR and UV Wavelength Applications

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Product Detail
Brand Name :
BonTek
Model Number :
Sapphire (Al2O3)
Certification :
ISO:9001
Place of Origin :
China
MOQ :
5 Pieces
Price :
Negotiable
Contact Supplier
R-plane 1102 C-plane 0001 Sapphire Wafer For IR and UV Wavelength Applications
R-plane 1102 C-plane 0001 Sapphire Wafer For IR and UV Wavelength Applications
R-plane 1102 C-plane 0001 Sapphire Wafer For IR and UV Wavelength Applications

Hangzhou Freqcontrol Electronic Technology Ltd.

Verified Supplier
4 Years
shanghai, hangzhou
Since 1999
Business Type :
Manufacturer, Trading Company
Main Products :
Piezoelectric Wafer, LiNbO3 Wafer, LiTaO3 Wafer
Total Annual :
800M-1500M
Employee Number :
10~99
Certification Level :
Verified Supplier
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