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Stepanov's Method Grown Sapphire Wafer 2Inch 3inch 4inch 6inch R-Axis M-plane
Stepanov's Method Grown Sapphire Wafer 2Inch 3inch 4inch 6inch R-Axis M-plane
Stepanov's Method Grown Sapphire Wafer 2Inch 3inch 4inch 6inch R-Axis M-plane
Stepanov's Method Grown Sapphire Wafer 2Inch 3inch 4inch 6inch R-Axis M-plane
Specifications
Brand Name :
BonTek
Model Number :
Sapphire (Al2O3)
Certification :
ISO:9001
Place of Origin :
China
MOQ :
5 Pieces
Price :
Negotiable
Payment Terms :
T/T
Supply Ability :
10000 pieces/Month
Delivery Time :
1-4 weeks
Packaging Details :
Cassette, Jar, Film package
Material :
Sapphire Wafer
Type :
Single Crystal
Color :
White / Red / Blue
Growth Method :
Horizontally Directed Crystallization (HDC)
Surface :
Double side polish
VIS range :
85%
Application :
Semicondutor Wafer, Led Chip, Optical Glass Window, Electronic Ceramics
Industry :
Led，optical Glass，eli-ready Wafer
Description

Stepanov's Method Grown Sapphire Wafer 2Inch 3inch 4inch 6inch R-Axis M-plane

Stepanov's method is used for growth of monocrystal sapphire details of various configurations, including sapphire rods, pipes and tapes.

The method of Horizontally Directed Crystallization is widely used in the synthesis of large sapphire monocrystals. The elements of the directed crystallization and zonal melting are successfully combined in the Gorizontally Directed Crystallization (HDC) method. The crystal grows at slow movement of the local melted zone along the container with the furnace charge, having a boat form. The Horizontal Directed Crystallization method provides receiving of monocrystalline sapphire with small sizes dispersion of cross section and allows to grow up sapphire monocrystal of any crystallographic orientation in the form of plates of the record sizes unattainable at use of other growth methods.

Stepanov's Method Grown Sapphire Wafer 2Inch 3inch 4inch 6inch R-Axis M-planeStepanov's Method Grown Sapphire Wafer 2Inch 3inch 4inch 6inch R-Axis M-planeStepanov's Method Grown Sapphire Wafer 2Inch 3inch 4inch 6inch R-Axis M-plane

OPTICAL PROPERTIES

Transmission

0.17 to 5.5 um

Refractive Index

1.75449 (o) 1.74663 (e) at 1.06 um

Reflection Loss

at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2%

Absorption Index

0.3 x 10-3 cm-1 at 2.4 um

dN/dT

13.7 x 10-6 at 5.4 um

dn/dm = 0

1.5 um

Orientation

R-plane, C-plane, A-plane, M-plane or a specified orientation

Orientation Tolerance

± 0.3°

Diameter

2 inches, 3 inches, 4 inches, 6 inches, 8 inches or others

Diameter Tolerance

0.1mm for 2 inches, 0.2mm for 3 inches, 0.3mm for 4 inches, 0.5mm for 6 inches

Thickness

0.25mm, 0.33mm, 0.43mm, 0.65mm, 1mm or others;

Thickness Tolerance

25μm

Primary Flat Length

16.0±1.0mm for 2 inches, 22.0±1.0mm for 3 inches, 30.0±1.5mm for 4 inches, 47.5/50.0±2.0mm for 6 inches

Primary Flat Orientation

A-plane (1 1-2 0 ) ± 0.2°; C-plane (0 0-0 1 ) ± 0.2°, Projected C-Axis 45 +/- 2°

TTV

≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches

BOW

≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches

Front Surface

Epi-Polished (Ra< 0.3nm for C-plane, 0.5nm for other orientations)

Back Surface

Fine ground (Ra=0.6μm~1.4μm) or Epi-polished

Packaging

Packaged in a class 100 clean room environment

Stepanov's Method Grown Sapphire Wafer 2Inch 3inch 4inch 6inch R-Axis M-plane

Acceptance Check

Stepanov's Method Grown Sapphire Wafer 2Inch 3inch 4inch 6inch R-Axis M-plane

1. The product is fragile. We have adequately packed it and labeled it fragile. We deliver through excellent domestic and international express companies to ensure transportation quality.

2. After receiving the goods, please handle with care and check whether the outer carton is in good condition. Carefully open the outer carton and check whether the packing boxes are in alignment. Take a picture before you take them out.

3. Please open the vacuum package in a clean room when the products are to be applied.

4. If the products are found damaged during courier, please take a picture or record a video immediately. DO NOT take the damaged products out of the packaging box! Contact us immediately and we will solve the problem well.

Product tags

nema 23 stepper specs

,

diamond segment 350mm for granite

,

granite steps from g603
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Stepanov's Method Grown Sapphire Wafer 2Inch 3inch 4inch 6inch R-Axis M-plane

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Product Detail
Brand Name :
BonTek
Model Number :
Sapphire (Al2O3)
Certification :
ISO:9001
Place of Origin :
China
MOQ :
5 Pieces
Price :
Negotiable
Contact Supplier
Stepanov's Method Grown Sapphire Wafer 2Inch 3inch 4inch 6inch R-Axis M-plane
Stepanov's Method Grown Sapphire Wafer 2Inch 3inch 4inch 6inch R-Axis M-plane

Hangzhou Freqcontrol Electronic Technology Ltd.

Verified Supplier
4 Years
shanghai, hangzhou
Since 1999
Business Type :
Manufacturer, Trading Company
Main Products :
Piezoelectric Wafer, LiNbO3 Wafer, LiTaO3 Wafer
Total Annual :
800M-1500M
Employee Number :
10~99
Certification Level :
Verified Supplier
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