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FD200R12KE3HOSA1
FD200R12KE3HOSA1
Specifications
Category :
Discrete Semiconductor Products Transistors IGBTs IGBT Modules
Current - Collector Cutoff (Max) :
5 mA
Product Status :
Active
Mounting Type :
Chassis Mount
Package :
Tray
Series :
C
Vce(on) (Max) @ Vge, Ic :
2.15V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max) :
1200 V
Supplier Device Package :
Module
Mfr :
Infineon Technologies
Operating Temperature :
-40°C ~ 125°C
Power - Max :
1050 W
IGBT Type :
Trench Field Stop
Package / Case :
Module
Input :
Standard
Input Capacitance (Cies) @ Vce :
14 nF @ 25 V
Configuration :
Single Chopper
NTC Thermistor :
No
Base Product Number :
FD200R12
Description :
IGBT MODULE 1200V 1050W
Description
IGBT Module Trench Field Stop Single Chopper 1200 V 1050 W Chassis Mount Module
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FD200R12KE3HOSA1

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Product Detail
Category :
Discrete Semiconductor Products Transistors IGBTs IGBT Modules
Current - Collector Cutoff (Max) :
5 mA
Product Status :
Active
Mounting Type :
Chassis Mount
Package :
Tray
Series :
C
Contact Supplier
FD200R12KE3HOSA1

Kailiyuan Electronic Technology (shenzhen) Co., Ltd.

Verified Supplier
2 Years
hongkong
Since 2016
Business Type :
Manufacturer, Distributor/Wholesaler, Exporter, Trading Company
Main Products :
IGBT Modules, Specialized ICs, Batteries
Total Annual :
1 Million-2.5 Million
Employee Number :
20~50
Certification Level :
Verified Supplier
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