BBO-based pockels cell are used to change the polarization state of light passing through it when an voltage is applied to the electrodes of BBO electro-optic crystals. Typical applications include Q-switching of the laser cavity, laser cavity dumping and coupling light into and form
regenerations amplifiers. Low piezoelectric ringing makes BBO Pockels cell attractive for the control of high-power and high repetition rate lasers. Fast switching electronic drivers properly matched to the cell are available for Q-switching, cavity dumping and other applications. BBO Pockels cells are transverse field devices. The quarter-wave voltage is proportional to the ratio of electrode spacing and crystal length, therefor, smaller aperture, lower quarter-wave voltage, besides, double crystal design, which has lower quarter-wave voltage, is widely used to work in half-wave mode with fast switching times.
ADVANTAGES:
SPECIFICATIONS:
Aperture: | 1.8mm | 2.8mm | 3.6mm | |||
Quarter-Wave Vlotage | 2400V | 1900V | 3600V | 2900V | 4800V | 3900V |
Capacitance | 4pF | 5 pF | 4 pF | 5 pF | 4 pF | 5 pF |
Extinction Ratio: | 1000:1 | |||||
Wave front distortion: | <λ/8 @633nm | |||||
Optical damage threshold: | 600 MW/cm2 1064nm 10ns 10Hz | |||||
Wavelength range: | 190-3500nm | |||||
Insersion Loss | <2% |