Products Description
KDP KD*P/DKDP
Potassium Dihydrogen Phosphate (KDP) and Potassium Deuterium Phosphate (KD*P } are among the most widely-used commercial NLO materials. They are commonly used for doubling, tripling and quadrupling of Nd:YAG laser at the room temperature. In addition, they are also excellent electro-optic crystals with high electro-optic coefficients, widely used as electro-optical modulators, Q-switches, and Pockels Cells, etc.
ELECTRO-OPTICAL/Q-SWITCHING APPLICATIONS
- Crystrong offers highly deuterated D>96% electro-optic crystal - DKDP for Q-switching application;
- Standard dimensions of electro-optic DKDP crystals for Q-switching are cylinders dia 920 mm and dia 1224 mm however manufacturing of custom size and rectangular shape crystals is available
- Gold evaporated or silver paste electrodes are available;
- Dielectric thin film AR coatings for specified laser wavelengths are available;
- Typical quarter wave voltage 3.4 kV at 1064 nm;
- Typical contrast ratio between crossed polarizers better than 1:2000;
- Damage threshold of AR coated DKDP surface >5 J/cm2 at 1064 nm, 10 ns pulses.
FREQUENCY CONVERSION APPLICATIONS
- DKDP crystals are used for second harmonic generation of high pulse energy low repetition rate (<100 Hz)
Q-switched and mode-locked Nd:YAG lasers. Cut angle of crystal Parallelism $ 20 arcsec crystal for operation at room temperature is 36.6° for type 1 phase matching and 53.7° deg for type 2 phase matching.
- DKDP crystals are used for third harmonic generation. Cut angle of crystal for operation at room temperature is 59.3° for type 2 phase matching.
- Type 1 DKDP crystals with non-critical cut angle θ=90° are used for fourth harmonic generation (532nm→266nm) of high pulse energy Q-switched and mode locked Nd:YAG lasers. Crystal must be heated at -50 ℃ temperature to match NCPM conditions.
ADVANTAGES
- Good UV transmission
- High optical damage threshold
- High birefringence
- High nonlinear coefficients
APPLICATIONS
- Laser frequency conversion — harmonic generation for high pulse energy,
- Electro-optical modulation
- Q-switching crystal for Pockels cells
SPECIFICATION
Flatness |
λ/8 at 633nm |
Parallelism |
≤20 arcsec |
Surface quality |
20-10 scratch & dig (MIL-PRF-13830B) |
Perpendicularity |
≤5 arcmin |
Angle tolerance |
≤± 0.25° |
Dimension tolerance |
±0.1mm |
Aperture tolerance |
±0.1mm |
Clear aperture |
90% of full aperture |
Chamfer |
≤0.2 mmx45° |
Chip |
≤0.1mm |
Quality Warranty Period |
One year under proper use |