Products Description:
RTP Q-SWITCH
RTP crystal appealing because it is not sensitive to moisture. easy to handle and coat, and also it does not exhibit piezo-electric ringing at elevated repetition rate. Moreover, RTP exhibits high electro-optic coefficients that allow the monitoring of Pockels cell with low power voltage requirement,
As RTP is transparent from 0.4 to 3.5um, it can be used in multiple types of laser such as Er:YAG laser at 2.94um with fairly good efficiency. Bulk absorption measurements at 1.064um range from
50 to 150ppm using Photothermal Common Path Interferometer.
RTP has a fairly high surface damage threshold at 15J/cm? (1064nm, 10ns, 10Hz).
ADVANTAGES
APPLICATION
SHG Na: lasers at 1064nm.
Electro-Optical Q-switch and modulation for optical waveguides.
Optical Parametric Amplifiers (OPA) and Oscillators (OPO) application.
SPECIFICATIONS
Aperture | up to 100x100mm2 |
Length | Minimum up to 1 mm,Maximum up to 40mm |
Dimension tolerance | ±0.1mm |
Deuteration Level | >98% |
Parallelism | 20 arc seconds |
Perpendicularity | 5 arc minutes |
S/D | 10/5 |
Flatness | λ/8@633nm |
Angle tolerance(degree) | 0.25°,0.25° |
Chamfer | 0.2mmx45° |
Chip | 0.1mm |
Optical Damage Threshold | >4GW/cm2@1064nm,20 |
λ/4 Voltage | <3.6KV@1064nm,20 |
λ/2 Voltage | <6.4KV@1064nm,20 |
Wavelength range | 300-1100nm |
Extinction Ratio | >1200:1 |
Capacitance | 6~10pF@1kHz |
Quality Guarantee | According to customer requirements one year under proper use. |