2N5551 / MMBT5551 NPN General-Purpose Amplifier MMBT5550LT1 High Voltage Transistor NPN Silicon
SOT-23 - Power Transistor and Darlingtons
Part number
BC807-T CMBTA56-T CMBT4403-T CMBTA06 CMBT3906-T CMBT3906 CMBTA56 CMBTA42-T CMBT4401-T
CMBTA42 CMBT3904 CMBT4403 CMBTA92 CMBT5551 CMBT5401 CMBT5551-T CMBT3904-T CMBTA92-T
CMBTA06-T CMBT5401-T CMBT4401 CMBT9014 MMBT5551
Electrical Characteristics
Mfr. # | MMBT5551 |
Mounting Style | SMD/SMT |
Transistor Polarity | NPN |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 160 V |
Collector- Base Voltage VCBO | 180 V |
Emitter- Base Voltage VEBO | 6 V |
Collector-Emitter Saturation Voltage | 0.2 V |
Maximum DC Collector Current | 0.6 A |
Pd - Power Dissipation | 325 mW |
Gain Bandwidth Product fT | 300 MHz |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
DC Collector/Base Gain hfe Min | 80 at 10 mA, 5 V |
DC Current Gain hFE Max | 250 at 10 mA, 5 V |
Product Type | BJTs - Bipolar Transistors |
Electrical Characteristics (at Ta = 25°C unless otherwise specified)