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4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
Specifications
Brand Name :
ANG
Model Number :
SIC-W05
Certification :
ISO
Place of Origin :
Guangdong, China
MOQ :
100
Price :
Depends on size and quantity
Payment Terms :
T/T, Western Union,Paypal
Supply Ability :
500,000pcs per month
Delivery Time :
8~10 working days
Packaging Details :
Singer Wafer in 100 Grade Cleaning Room
Color :
Green
Mpd :
<2cm-2
Size :
<2cm-2
Transport Package :
Singer Wafer in 100 Grade Cleaning Room
Description

4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

Regarding Silicon Carbide(SiC) Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

SiC Application

1. high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,diodes, IGBT, MOSFET
2. optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED



Specification

Grade
Zero MPD Grade
Production Grade
Research Grade
Dummy Grade
Diameter
50.6mm±0.2mm
Thickness
1000±25um Or other customized thickness
Wafer Orientation
Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI
Micropipe Density
≤0 cm-2
≤2 cm-2
≤5 cm-2
≤30 cm-2
Resistivity 4H-N
0.015~0.028 Ω•cm
Resistivity 4/6H-SI
≥1E7 Ω·cm
Primary Flat
{10-10}±5.0° or round shape
Primary Flat Length
18.5 mm±2.0 mm or round shape
Secondary Flat Length
10.0mm±2.0 mm
Secondary Flat Orientation
Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion
1 mm
TTV/Bow /Warp
≤10μm /≤10μm /≤15μm
Roughness
Polish Ra≤1 nm / CMP Ra≤0.5 nm
Cracks by high intensity light
None
1 allowed, ≤2 mm
Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light
Cumulative area ≤1%
Cumulative area ≤1%
Cumulative area ≤3%
Polytype Areas by high intensity light
None
Cumulative area ≤2%
Cumulative area ≤5%
Scratches by high intensity light
3 scratches to 1×wafer diameter cumulative length
5 scratches to 1×wafer diameter cumulative length
5 scratches to 1×wafer diameter cumulative length
edge chip
None
3 allowed, ≤0.5 mm each
5 allowed, ≤1 mm each

Common Size In Stock

4H-N Type / High Purity SiC wafer/ingots

2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots

4H Semi-insulating / High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
Customzied size for 2-6inch

Product Picture

4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

PACKAGE

4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

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4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

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Product Detail
Brand Name :
ANG
Model Number :
SIC-W05
Certification :
ISO
Place of Origin :
Guangdong, China
MOQ :
100
Price :
Depends on size and quantity
Contact Supplier
4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

Shenzhen A.N.G Technology Co., Ltd

Site Member
10 Years
guangdong, shenzhen
Since 2010
Business Type :
Manufacturer, Distributor/Wholesaler, Exporter, Trading Company, Seller
Main Products :
RFID CARD, PRINTED CARD, NFC TAG
Total Annual :
5,000,000-6,000,000
Employee Number :
100~150
Certification Level :
Site Member
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