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6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer
6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer
6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer
6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer
6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer
6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer
6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer
6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer
Specifications
Brand Name :
ANG
Model Number :
ANG-H6
Certification :
ISO
Place of Origin :
Guangdong, China
MOQ :
100
Price :
Depend on size and quantity
Payment Terms :
T/T, Western Union,Paypal
Supply Ability :
500,000pcs per month
Delivery Time :
8~10 working days
Packaging Details :
1pc per box
Mpd :
<2cm-2
Grade :
Production Grade
Resistivity :
0.015-0.1 Ohm.Cm
Specification :
2inch/4inch/6inch
Description

6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer

6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer SiC(Silicon Carbide) Wafer

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the
important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power
LEDs.

Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide
single crystal (sic) substrates wafers

Specification

Property
4H-SiC, Single Crystal
6H-SiC, Single Crystal
Lattice Parameters
a=3.076 Å c=10.053 Å
a=3.073 Å c=15.117 Å
Stacking Sequence
ABCB
ABCACB
Mohs Hardness
≈9.2
≈9.2
Density
3.21 g/cm3
3.21 g/cm3
Therm. Expansion Coefficient
4-5×10-6/K
4-5×10-6/K
Refraction Index @750nm
no = 2.61
ne = 2.66
no = 2.60
ne = 2.65
Dielectric Constant
c~9.66
c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)
a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)
a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K
a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K
Band-gap
3.23 eV
3.02 eV
Break-Down Electrical Field
3-5×106V/cm
3-5×106V/cm
Saturation Drift Velocity
2.0×105m/s
2.0×105m/s


4H-N 4 inch diameter Silicon Carbide (SiC) Substrate Specification

2 inch diameter Silicon Carbide (SiC) Substrate Specification
Grade
Zero MPD Grade
Production Grade
Research Grade
Dummy Grade
Diameter
100. mm±0.2 mm or other customized size
Thickness
1000±25 um Or other customized thickness
Wafer Orientation
Off axis : 4.0° toward <1120> ±0.5°
for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI
Micropipe Density
≤0 cm-2
≤2 cm-2
≤5 cm-2
≤30 cm-2
Resistivity 4H-N
0.015~0.028 Ω•cm
Resistivity 4/6H-SI
≥1E7 Ω·cm
Primary Flat
{10-10}±5.0° or round shape
Primary Flat Length
18.5 mm±2.0 mm or round shape
Secondary Flat Length
10.0mm±2.0 mm
Secondary Flat Orientation
Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion
1 mm
TTV/Bow /Warp
≤10μm /≤10μm /≤15μm
Roughness
Polish Ra≤1 nm / CMP Ra≤0.5 nm
Cracks by high intensity light
None
1 allowed, ≤2 mm
Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light
Cumulative area ≤1%
Cumulative area ≤1%
Cumulative area ≤3%
Polytype Areas by high intensity light
None
Cumulative area ≤2%
Cumulative area ≤5%
Scratches by high intensity light
3 scratches to 1×wafer diameter cumulative length
5 scratches to 1×wafer diameter cumulative length
5 scratches to 1×wafer diameter cumulative length
edge chip
None
3 allowed, ≤0.5 mm each
5 allowed, ≤1 mm each

Common Size

4H-N Type / High Purity SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots
4H Semi-insulating / High Purity SiC wafer
2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
Customzied size for 2-6inch

6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer

Application

6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer

Package

6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer

6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer

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6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer

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Product Detail
Brand Name :
ANG
Model Number :
ANG-H6
Certification :
ISO
Place of Origin :
Guangdong, China
MOQ :
100
Price :
Depend on size and quantity
Contact Supplier
6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer
6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer
6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer
6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer

Shenzhen A.N.G Technology Co., Ltd

Site Member
10 Years
guangdong, shenzhen
Since 2010
Business Type :
Manufacturer, Distributor/Wholesaler, Exporter, Trading Company, Seller
Main Products :
RFID CARD, PRINTED CARD, NFC TAG
Total Annual :
5,000,000-6,000,000
Employee Number :
100~150
Certification Level :
Site Member
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