Specifications
Brand Name :
Toshiba
Model Number :
2SC5200-O(Q)
Place of Origin :
JP
MOQ :
1pcs
Price :
Email us for details
Payment Terms :
T/T, Western Union
Supply Ability :
5000
Delivery Time :
1day
Packaging Details :
Tray
Description :
2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
Stock :
2000pcs
Shipping Method :
LCL, AIR, FCL, Express
Date Code :
Newest code
Shipping by :
DHL/UPS/Fedex
Condition :
New*Original
Warranty :
365days
Lead free :
Rohs Compliant
Lead times :
Immediately Shipment
Package :
TO-3P-3
Mounting Style :
Through Hole
Description

2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole

Toshiba
Product Category: Bipolar Transistors - BJT
RoHS: Details
Through Hole
TO-3P-3
NPN
Single
230 V
230 V
5 V
400 mV
15 A
150 W
30 MHz
-
+ 150 C
2SC
Tray
Brand: Toshiba
Continuous Collector Current: 15 A
DC Collector/Base Gain hfe Min: 55
DC Current Gain hFE Max: 160
Height: 26 mm
Length: 20.5 mm
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
Technology: Si
Width: 5.2 mm
Unit Weight: 0.239863 oz

Power Amplifier Applications

• High breakdown voltage: VCEO = 230 V (min)

• Complementary to 2SA1943

• Suitable for use in 100-W high fidelity audio amplifier’s output stage

2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

Specifications

  • Manufacturer: Toshiba
  • Transistor Type: NPN
  • Package Type: TO-3PL
  • Maximum Power Dissipation: 150W
  • Collector Emitter Voltage (VCEO): 230V
  • Maximum Collector Current: 15A
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
  • Frequency: 30MHz
  • Mounting Type: Through Hole
  • Operating Temperature: 150°C TJ
  • Part Status: Obsolete

2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

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2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

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Brand Name :
Toshiba
Model Number :
2SC5200-O(Q)
Place of Origin :
JP
MOQ :
1pcs
Price :
Email us for details
Payment Terms :
T/T, Western Union
Contact Supplier
video
2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

Wisdtech Technology Co.,Limited

Verified Supplier
2 Years
guangdong, shenzhen
Business Type :
Seller
Employee Number :
>100
Certification Level :
Verified Supplier
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