Silicon carbide wafer is a kind of basic material widely evaluated in semiconductor device manufacturing. It has the characteristics of high hardness, high heat resistance, high chemical stability and high temperature resistance. The following are some of the main applications of silicon carbide wafers in semiconductor device manufacturing:

Power semiconductor device manufacturing: Silicon carbide wafers are widely used in power semiconductor device manufacturing, such as IGBT, MOSFET, differential and so on. Because the silicon carbide high breakdown has the characteristics of resistance strength, high thermal conductivity and low on-resistance, it can greatly improve the performance of power semiconductor devices, such as reducing the switching loss and improving the switching speed.

Optoelectronic device manufacturing: Silicon carbide wafers are also used to manufacture optoelectronic devices, such as leds, laser attenuation, etc. Silicon carbide wafers have optical brightness and high temperature resistance, giving them advantages in the manufacture of high temperature leds and high power lasers.

Wireless communication device manufacturing: silicon carbide devices can also be used to manufacture wireless communication devices, such as SIC MESFET, SIC HEMT, etc. Silicon carbide devices have the characteristics of high electron mobility and high microwave frequency response speed, which has potential application value in high frequency devices.

Other applications: Silicon carbide wafers can also be used to manufacture sensors, thermoelectric devices, solar cells and other fields. The high hardness and chemical stability of silicon carbide wafers have potential applications in the manufacture of wear-resistant and corrosion-resistant components.