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Square SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inch
Square SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inch
Square SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inch
Square SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inch
Square SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inch
Square SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inch
Square SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inch
Square SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inch
Specifications
Brand Name :
ZMKJ
Model Number :
10x10x0.5mmt
Certification :
ROHS
Place of Origin :
China
MOQ :
1pcs
Price :
by case
Payment Terms :
T/T, Western Union, MoneyGram
Supply Ability :
1-50pcs/month
Delivery Time :
1-6weeks
Packaging Details :
single wafer package in 100-grade cleaning room
Material :
SiC single crystal 4H-N type
Grade :
Zero, Research, and Dunmy grade
Thicnkss :
0.1 0.2 0.3 0.35 0.43 0.5
Application :
New energy vehicles, 5G communications
Diameter :
2-8inch or 10x10mmt, 5x10mmt:
color :
Green Tea
Description

Silicon carbide wafer optical 1/2/3 inch SIC wafer for sale Sic Plate Silicon Wafer Flat Orientation Enterprises for Sale 4inch 6inch seed sic wafer 1.0mm Thickness 4h-N SIC Silicon Carbide Wafer For seed growth 6H-N/6H-Semi 4H HPSI 5*10mmt 10x10mmt 5*5mm polished Silicon Carbide sic substrate chips Wafer

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), or carborundum, is a semiconductor containing silicon and carbon with the chemical formula SiC. SiC is used in semiconductor electronics devices operating at high temperatures, high voltages, or both. SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

1. Description
Property
4H-SiC, Single Crystal
6H-SiC, Single Crystal
Lattice Parameters
a=3.076 Å c=10.053 Å
a=3.073 Å c=15.117 Å
Stacking Sequence
ABCB
ABCACB
Mohs Hardness
≈9.2
≈9.2
Density
3.21 g/cm3
3.21 g/cm3
Therm. Expansion Coefficient
4-5×10-6/K
4-5×10-6/K
Refraction Index @750nm
no = 2.61
ne = 2.66
no = 2.60
ne = 2.65
Dielectric Constant
c~9.66
c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)
a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)
a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K
a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K
Band-gap
3.23 eV
3.02 eV
Break-Down Electrical Field
3-5×106V/cm
3-5×106V/cm
Saturation Drift Velocity
2.0×105m/s
2.0×105m/s

High purity 4inch diameter Silicon Carbide (SiC) Substrate Specification

2inch diameter Silicon Carbide (SiC) Substrate Specification
Grade Zero MPD Grade Production Grade Research Grade Dummy Grade
Diameter 50.8 mm±0.2mm
Thickness 330 μm±25μm or 430±25um
Wafer Orientation Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI
Micropipe Density ≤0 cm-2 ≤5 cm-2 ≤15 cm-2 ≤100 cm-2
Resistivity 4H-N 0.015~0.028 Ω•cm
6H-N 0.02~0.1 Ω•cm
4/6H-SI ≥1E5 Ω·cm
Primary Flat {10-10}±5.0°
Primary Flat Length 18.5 mm±2.0 mm
Secondary Flat Length 10.0mm±2.0 mm
Secondary Flat Orientation Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion 1 mm
TTV/Bow /Warp ≤10μm /≤10μm /≤15μm
Roughness Polish Ra≤1 nm
CMP Ra≤0.5 nm
Cracks by high intensity light None 1 allowed, ≤2 mm Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light Cumulative area ≤1% Cumulative area ≤1% Cumulative area ≤3%
Polytype Areas by high intensity light None Cumulative area ≤2% Cumulative area ≤5%
Scratches by high intensity light 3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length
edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each

Square SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inchSquare SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inchSquare SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inchSquare SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inch

SiC Applications

Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength optoelectronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs-based devices. Below are some popular applications of SiC substrates.

Other products

8inch SiC wafer dummy grade 2inch SiC wafer

Square SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inchSquare SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inch

Packaging – Logistics
We are concerned with each detail of the package, cleaning, anti-static, and shock treatment.

According to the quantity and shape of the product, we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassettes in the 100-grade cleaning room.

Square SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inch

Product tags

silicon carbide structure

,

structure of silicon carbide

,

silicon carbide wafer
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Square SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inch

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Product Detail
Brand Name :
ZMKJ
Model Number :
10x10x0.5mmt
Certification :
ROHS
Place of Origin :
China
MOQ :
1pcs
Price :
by case
Contact Supplier
video
Square SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inch
Square SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inch
Square SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inch
Square SiC Windows Silicon Carbide Substrate 2inch 4inch 6inch 8inch

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Sapphire Substrate, Doped Sapphire Crystal, Sapphire Optical Windows
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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