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6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade
6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade
6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade
6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade
6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade
6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade
Specifications
Brand Name :
ZMKJ
Model Number :
6inch 150mm SiC Substrate
Certification :
ROHS
Place of Origin :
CHINA
MOQ :
2pcs
Price :
by case
Payment Terms :
T/T, Western Union, MoneyGram
Supply Ability :
1-500pcs/month
Delivery Time :
1-6weeks
Packaging Details :
single wafer package in 100-grade cleaning room
Material :
SiC single crystal 4H-N 4H-Si
Grade :
Production Dummy and Zero MPD
Thicnkss :
0.35mm and 0.5mm
LTV/TTV/Bow Warp :
≤5 um/≤15 u/$40 um/≤60 um
Application :
For MOS and Semiconductor
Diameter :
6inch 150mm
Color :
Green Tea
MPD :
<2cm-2 for Zero MPD production grade
Description

Silicon Carbide (SiC) Substrates 4H and 6H Epi-Ready SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide(SiC) wafer N Type
6inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic

About Silicon Carbide (SiC)Crystal

Shanghai Famous Trade Co., Ltd 150 mm SiC wafers offer device manufacturers a consistent, high-quality substrate for developing high-performance power devices. Our SiC substrates are produced from crystal ingots of the highest quality using proprietary state-of-the-art physical vapor transport (PVT) growth techniques and computer-aided manufacturing (CAM). Advanced wafer manufacturing techniques are used to convert ingots into wafers to ensure the consistent, reliable quality you need.

Key features

  • Optimizes targeted performance and total cost of ownership for next-generation power electronics devices
  • Large diameter wafers for improved economies of scale in semiconductor manufacturing
  • Range of tolerance levels to meet specific device fabrication needs
  • High crystal quality
  • Low defect densities

Sized for improved production

With the 6inch 150 mm SiC wafer size, we offer manufacturers the ability to leverage improved economies of scale compared with 100 mm device fabrication. Our 6inch 150 mm SiC Wafers offer consistently excellent mechanical characteristics to ensure compatibility with existing and developing device fabrication processes.

6inch 200mm N-Type SiC Substrates Specifications
PropertyP-MOS GradeP-SBD GradeD Grade
Crystal Specifications
Crystal Form4H
Polytype AreaNone PermittedArea≤5%
(MPD) a≤0.2 /cm2≤0.5 /cm2≤5 /cm2
Hex PlatesNone PermittedArea≤5%
Hexagonal PolycrystalNone Permitted
Inclusions aArea≤0.05%Area≤0.05%N/A
Resistivity0.015Ω•cm—0.025Ω•cm0.015Ω•cm—0.025Ω•cm0.014Ω•cm—0.028Ω•cm
(EPD)a≤4000/cm2≤8000/cm2N/A
(TED)a≤3000/cm2≤6000/cm2N/A
(BPD)a≤1000/cm2≤2000/cm2N/A
(TSD)a≤600/cm2≤1000/cm2N/A
(Stacking Fault)≤0.5% Area≤1% AreaN/A
Surface Metal Contamination(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2
Mechanical Specifications
Diameter150.0 mm +0mm/-0.2mm
Surface OrientationOff-Axis:4°toward <11-20>±0.5°
Primary Flat Length47.5 mm ± 1.5 mm
Secondary Flat LengthNo Secondary Flat
Primary Flat Orientation<11-20>±1°
Secondary Flat OrientationN/A
Orthogonal Misorientation±5.0°
Surface FinishC-Face:Optical Polish,Si-Face:CMP
Wafer EdgeBeveling
Surface Roughness
(10μm×10μm)		Si Face Ra≤0.20 nm ； C Face Ra≤0.50 nm
Thickness a350.0μm± 25.0 μm
LTV(10mm×10mm)a≤2μm≤3μm
(TTV)a≤6μm≤10μm
(BOW) a≤15μm≤25μm≤40μm
(Warp) a≤25μm≤40μm≤60μm
Surface Specifications
Chips/IndentsNone Permitted ≥0.5mm Width and DepthQty.2 ≤1.0 mm Width and Depth
Scratches a
(Si Face,CS8520)		≤5 and Cumulative Length≤0.5×Wafer Diameter≤5 and Cumulative Length≤1.5× Wafer Diameter
TUA(2mm*2mm)≥98%≥95%N/A
CracksNone Permitted
ContaminationNone Permitted
Edge Exclusion3mm

6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade

CATALOGUE COMMON SIZE In OUR INVENTORY LIST

4H-N Type / High Purity SiC wafer/ingots

2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots


4H Semi-insulating / High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
Customzied size for 2-6inch

>Packaging – Logistics

Concerns about each detail of the package, cleaning, anti-static, and shock treatment.
According to the quantity and shape of the product, we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassettes in the 100-grade cleaning room.


















Product tags

vdk aluminum profile

,

acme pcb assembly

,

ltcc substrate
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6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade

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Product Detail
Brand Name :
ZMKJ
Model Number :
6inch 150mm SiC Substrate
Certification :
ROHS
Place of Origin :
CHINA
MOQ :
2pcs
Price :
by case
Contact Supplier
6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade
6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade
6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Sapphire Substrate, Doped Sapphire Crystal, Sapphire Optical Windows
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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