MachineU > China Products > Tools & Hardware > Abrasives > Abrasives
8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS
8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS
8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS
8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS
8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS
8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS
8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS
8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS
Specifications
Brand Name :
ZMKJ
Model Number :
8inch sic wafers 4h-n
Certification :
ROHS
Place of Origin :
CHINA
MOQ :
1pcs
Price :
by case
Payment Terms :
T/T, Western Union, MoneyGram
Supply Ability :
1-20pcs/month
Delivery Time :
3-6 months
Packaging Details :
single wafer package in 100-grade cleaning room
Material :
SiC single crystal
Grade :
Production Grade
Delivery date :
3 months
Application :
device maker polishing test MOS
Diameter :
200±0.5mm
MOQ :
1
Description

SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide Ceramic Excellent CorrosionSingle crystal single side polished silicon wafer sic wafer polishing wafer manufacturer Silicon Carbide SiC Wafer 4H-N SIC ingots/200mm SiC Wafers 200mm SiC Wafers

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), or carborundum, is a semiconductor containing silicon and carbon with the chemical formula SiC. SiC is used in semiconductor electronics devices operating at high temperatures, high voltages, or both. SiC is also one of the important LED components, it is a popular substrate for growing GaN devices and serves as a heat spreader in high-power LEDs.

Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65
Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K

c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K

c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K

c~3.2 W/cm·K@298K
Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s


To overcome these challenges and obtain high quality 200mm SiC wafers,solutions are proposed:
In terms of 200mm seed crystal preparation, appropriate temperature field, flow field, and expanding assemblwere studied and designed to take into account crystal quality and expanding size; Starting with a 150mm SiCseed crystal, carry out seed crystal iteration to gradually expand the SiC crystal size until it reaches 200mm;Throuch multiple crystal growth and processing, gradually optimize the crystal quality in the crystal expandingarea, and improve the quality of 200mm seed crystals.
n terms of 200mm conductive crvstal and substrate preparation. research has optimized the temperature fieland flow field design for large size crystal growth, conduct 200mm conductive SiC crystal growth, and controldoping uniformity. After rough processing and shaping of the crystal, an 8-inch electrically conductive 4H-SiCingot with a standard diameter was obtained. After cutting, grinding, polishing, processing to obtain SiC 200mmwafers with a thickness of 525um or so.

8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS

SiC Application

Due to SiC physical and electronic properties, Silicon Carbide-based devices are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices, compared with Si and GaAs-based device.

Optoelectronic Devices

  • SiC-based devices are

  • low lattice mismatch fall-nitride epitaxial layers

  • high thermal conductivity

  • monitoring of combustion processes

  • all sorts of UV-detection

  • Due to SiC material properties, SiC-based electronics and devices can work in very hostile environments, which can work under high temperatures, high power, and high radiation conditions

Product tags

silicon carbide polishing compound

,

silicon carbide grit size

,

silicon carbide manufacturing process
Send your message to this supplier
Send Now

8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS

Ask Latest Price
Product Detail
Brand Name :
ZMKJ
Model Number :
8inch sic wafers 4h-n
Certification :
ROHS
Place of Origin :
CHINA
MOQ :
1pcs
Price :
by case
Contact Supplier
8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS
8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS
8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS
8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Sapphire Substrate, Doped Sapphire Crystal, Sapphire Optical Windows
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Silicon Carbide Wafer
MachineU China Products Tools & Hardware Abrasives Abrasives
Contact Supplier
Submit Requirement